NPN Silicon Transistor LRC LMBT3904N3T5G Suitable for Various Applications Featuring RoHS Compliance
Key Attributes
Model Number:
LMBT3904N3T5G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT3904N3T5G
Package:
SOT-883-3
Product Description
Product Overview
The LMBT3904N3T5G and S-LMBT3904N3T5G are NPN silicon general purpose transistors designed for a wide range of applications. The S-prefix variant is specifically tailored for automotive and other applications requiring unique site and control change requirements, offering AEC-Q101 qualification and PPAP capability. These transistors are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix only)
Technical Specifications
| Parameter | Symbol | LMBT3904N3T5G | S-LMBT3904N3T5G | Unit | Min. | Typ. | Max. |
| MAXIMUM RATINGS | |||||||
| CollectorEmitter Voltage | VCEO | 40 | 40 | V | |||
| CollectorBase Voltage | VCBO | 60 | 60 | V | |||
| EmitterBase Voltage | VEBO | 6 | 6 | V | |||
| Collector Current Continuous | IC | 200 | 200 | mA | |||
| Total Device Dissipation, FR5 Board | PD | 250 | 250 | mW | |||
| Derate above 25C | 2 | 2 | mW/C | ||||
| JunctiontoAmbient Thermal Resistance | RJA | 500 | 500 | C/W | |||
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | C | |||
| ELECTRICAL CHARACTERISTICS | |||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 | 40 | V | |||
| CollectorBase Breakdown Voltage | VBR(CBO) | 60 | 60 | V | |||
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | 6 | V | |||
| Collector Cutoff Current | ICEX | nA | 50 | ||||
| Base Cutoff Current | IBL | nA | 50 | ||||
| DC Current Gain | HFE | 40 | 70 | ||||
| 100 | 300 | ||||||
| CollectorEmitter Saturation Voltage | VCE(sat) | V | 0.2 | 0.65 | |||
| 0.3 | 0.85 | ||||||
| BaseEmitter Saturation Voltage | VBE(sat) | V | 0.65 | 0.95 | |||
| CurrentGain Bandwidth Product | fT | 300 | 300 | MHz | |||
| Output Capacitance | Cobo | pF | 4 | ||||
| Input Capacitance | Cibo | pF | 8 | ||||
| SWITCHING CHARACTERISTICS | |||||||
| Delay Time | td | ns | 35 | ||||
| Rise Time | tr | ns | 35 | ||||
| Storage Time | ts | ns | 200 | ||||
| Fall Time | tf | ns | 50 | ||||
2111041830_LRC-LMBT3904N3T5G_C2912032.pdf
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