Signal transistor LRC LBC817-25WT1G NPN type with SC70 package and stable electrical characteristics
Key Attributes
Model Number:
LBC817-25WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC817-25WT1G
Package:
SC-70(SOT-323)
Product Description
Product Overview
This document details the LBC817-25WT1G, a general-purpose NPN transistor designed for various electronic applications. It offers a range of electrical characteristics including breakdown voltages, cutoff currents, saturation voltages, and gain-bandwidth product, making it suitable for signal amplification and switching.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Marking: 6B
- Material Compliance: RoHS requirements
- Package Type: SC-70 (SOT-323)
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 45 | V | (IC = 10 mA) | ||
| CollectorEmitter Breakdown Voltage | V (BR)CES | 50 | V | (VEB = 0, IC = 10 A) | ||
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | V | (I E = 1.0 A) | ||
| Collector Cutoff Current | I CBO | 100 | nA | (VCB = 20 V) | ||
| Collector Cutoff Current | I CBO | 5.0 | A | (VCB = 20 V, TA = 150C) | ||
| Total Device Dissipation (FR-5 Board) | P D | 150 | mW | T A=25 C | ||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | R JA | 833 | C/W | |||
| Total Device Dissipation (Alumina Substrate) | P D | 200 | mW | T A = 25C | ||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | R JA | 625 | C/W | |||
| Junction and Storage Temperature | T J, Tstg | 55 | +150 | C | ||
| DC Current Gain | h FE | 160 | 400 | (I C= 100 mA, V CE = 1.0 V) | ||
| CollectorEmitter Saturation Voltage | V CE(sat) | 0.7 | V | (I C = 500 mA, I B = 50 mA) | ||
| BaseEmitter On Voltage | V BE(on) | 1.2 | V | ( I C = 500 mA, V CE = 1.0 V) | ||
| CurrentGain Bandwidth Product | f T | 100 | MHz | ( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz) | ||
| Output Capacitance | C obo | 10 | pF | (V CB = 10 V, f = 1.0 MHz) |
Ordering Information
| Device | Marking | Shipping |
|---|---|---|
| LBC817-25WT1G | 6B | 3000/Tape&Reel |
| LBC817-25WT3G | 6B | 10000/Tape&Reel |
1810262011_LRC-LBC817-25WT1G_C12784.pdf
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