NPN Silicon Transistor LRC L8050HRLT1G Featuring 15 Amp Collector Current and PbFree Compact Package
Key Attributes
Model Number:
L8050HRLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
150nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L8050HRLT1G
Package:
SOT-23
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. L8050H series are NPN Silicon General Purpose Transistors designed for high current capacity in a compact SOT-23 package. These epitaxial planar type transistors offer an IC of 1.5 A and are available in Pb-Free packages. An NPN complement, the L8050H, is also available. The S- prefix denotes devices suitable for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Type: NPN Silicon General Purpose Transistor
- Package: SOT-23
- Certifications: AEC-Q101 Qualified (S- prefix devices)
- Material: Epitaxial planar type
- Pb-Free Package: Available
Technical Specifications
| Device Marking | Series | Shipping | Collector-Emitter Voltage (VCEO) | Collector-Base Voltage (VCBO) | Emitter-Base Voltage (VEBO) | Collector Current (IC) | Total Device Dissipation (PD) FR-5 Board (TA=25C) | Derate above 25C | Thermal Resistance (RJA) FR-5 Board | Total Device Dissipation (PD) Alumina Substrate (TA=25C) | Derate above 25C | Thermal Resistance (RJA) Alumina Substrate | Junction and Storage Temperature (Tj, Tstg) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | Emitter-Base Breakdown Voltage (V(BR)EBO) | Collector-Base Breakdown Voltage (V(BR)CBO) | Collector Cutoff Current (ICBO) | Emitter Cutoff Current (IEBO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(S)) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| L8050HPLT1G | P | 10000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 100 - 600 | 0.5 V |
| L8050HPLT3G | P | 3000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 100 - 600 | 0.5 V |
| L8050HQLT1G | Q | 10000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 150 - 300 | 0.5 V |
| L8050HQLT3G | Q | 3000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 150 - 300 | 0.5 V |
| L8050HRLT1G | R | 10000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 200 - 400 | 0.5 V |
| L8050HRLT3G | R | 3000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 200 - 400 | 0.5 V |
| L8050HSLT1G | S | 10000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 300 - 600 | 0.5 V |
| L8050HSLT3G | S | 3000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 300 - 600 | 0.5 V |
| S-L8050HPLT1G | P (Automotive) | 10000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 100 - 600 | 0.5 V |
| S-L8050HPLT3G | P (Automotive) | 3000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 100 - 600 | 0.5 V |
| S-L8050HQLT1G | Q (Automotive) | 10000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 150 - 300 | 0.5 V |
| S-L8050HQLT3G | Q (Automotive) | 3000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 150 - 300 | 0.5 V |
| S-L8050HRLT1G | R (Automotive) | 10000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 200 - 400 | 0.5 V |
| S-L8050HRLT3G | R (Automotive) | 3000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 200 - 400 | 0.5 V |
| S-L8050HSLT1G | S (Automotive) | 10000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 300 - 600 | 0.5 V |
| S-L8050HSLT3G | S (Automotive) | 3000/Tape&Reel | 25 V | 40 V | 5 V | 1500 mAdc | 225 mW | 1.8 mW/C | 556 C/W | 300 mW | 2.4 mW/C | 417 C/W | -55 to +150 C | 25 V | 5 V | 40 V | 150 nA | 150 nA | 300 - 600 | 0.5 V |
1809191623_LRC-L8050HRLT1G_C78092.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
