Low Saturation Voltage NPN Transistor LRC S-LBSS4250Y3T1G PPAP Capable RoHS Compliant for Motor Drivers

Key Attributes
Model Number: S-LBSS4250Y3T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
360MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBSS4250Y3T1G
Package:
SOT-89
Product Description

Product Overview

The LBSS4250Y3T1G and S-LBSS4250Y3T1G are NPN Middle Power Transistors designed for middle power driver applications. They offer low VCE(sat) and are suitable for motor drivers and LED drivers. The S- prefix variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications with unique site and control change requirements. Both product variants comply with RoHS requirements and are Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD. (LRC)
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified and PPAP capable (S- prefix)

Technical Specifications

ModelTypeCurrent RatingVoltage RatingMax. Collector Current (Continuous)Max. Pulsed Collector CurrentMax. Collector-Emitter VoltageMax. Collector-Base VoltageMax. Emitter-Base VoltageTotal Device Dissipation (FR-4 Board @ 25C)Thermal Resistance (Junction-to-Ambient)Min. DC Current Gain (VCE=2V, IC=50mA)Max. Collector-Emitter Saturation Voltage (IC=700mA, IB=35mA)Transition Frequency (VCE=10V, IE=-300mA, f=100MHz)Max. Output Capacitance (VCB=10V, IE=0A, f=1MHz)
LBSS4250Y3T1GNPN2.0A50V2 A4 A50 V50 V6 V550 mW4.4 C/W1800.35 V360 MHz12 pF
S-LBSS4250Y3T1GNPN2.0A50V2 A4 A50 V50 V6 V550 mW4.4 C/W1800.35 V360 MHz12 pF

2410010403_LRC-S-LBSS4250Y3T1G_C2941703.pdf

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