LRC L2N7002SDW1T1G MOSFET N Channel Device with Automotive Grade S Prefix and Halogen Free Materials
Key Attributes
Model Number:
L2N7002SDW1T1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
440pC@4.5V
Mfr. Part #:
L2N7002SDW1T1G
Package:
SC-88
Product Description
Product Overview
The L2N7002SDW1T1G and S-L2N7002SDW1T1G are N-Channel Small Signal MOSFETs designed for various electronic applications. These devices are RoHS compliant and Halogen Free, ensuring environmental responsibility. The S-prefix variant is specifically qualified for automotive and other applications requiring stringent site and control change requirements, including AEC-Q101 qualification and PPAP capability. They offer ESD protection and low RDS(on) for efficient operation. Key applications include low-side load switches, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones.
Product Attributes
- Compliance: RoHS and Halogen Free
- Automotive Qualification: S-prefix variants are AEC-Q101 qualified and PPAP capable
- ESD Protection: Yes
- Package Type: SC-88 (SOT-363)
- Manufacturer: Leshan Radio Company, LTD.
- Revision: Rev.A Mar. 2019
Technical Specifications
| Model | Device | Marking | Shipping | Drain-Source Voltage (VDSS) | Gate-Source Voltage (VGS) | Pulsed Drain Current (IDM) | Source Current (IS) | Total Device Dissipation (PD) - Steady State | Total Device Dissipation (PD) - t<5s | Junction-to-Ambient (RJA) - Steady State | Junction-to-Ambient (RJA) - t<5s | Junction and Storage Temperature (TJ, Tstg) | Lead Temperature for Soldering (TL) | Drain-Source Breakdown Voltage (VBRDSS) | Drain-Source Breakdown Voltage Temp. Coefficient (VBRDSS/TJ) | Zero Gate Voltage Drain Current (IDSS) | Gate-Body Leakage Current, Forward (IGSSF) | Gate-Body Leakage Current, Reverse (IGSSR) | Gate Threshold Voltage (VGS(th)) | Gate Threshold Voltage Temp. Coefficient (VGS(TH)/TJ) | Static Drain-Source On-State Resistance (RDS(on)) | Forward Transconductance (gfs) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Total Gate Charge (QG(TOT)) | Gate-to-Source Charge (QGS) | Gate-to-Drain Charge (QGD) | Turn-On Delay Time (td(on)) | Rise Time (tr) | Turn-Off Delay Time (td(off)) | Fall Time (tf) | Diode Forward On-Voltage (VSD) | Gate-Source ESD Rating (HBM) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| L2N7002SDW1T1G | Small Signal MOSFET | 701 | 10000/Tape&Reel | 60 V | 20 V | 380 mA | 300 mA | 380 mW | 420 mW | 300 C/W | 260 C/W | -55 ~ +150 C | 300 C | 60 V | - | 100 nA | 10 A | -10 A | 1.0 V | - 0.2 mV/C | 1.5 (VGS=10V, ID=500mA) / 2.8 (VGS=4.5V, ID=200mA) | 80 mS | - pF | - pF | - pF | - nC | - nC | - nC | - ns | - ns | - ns | - ns | 0.85 V (IS=0.5A) | 2000 V |
| S-L2N7002SDW1T1G | Small Signal MOSFET | - | 3000/Tape&Reel | 60 V | 20 V | 380 mA | 300 mA | 380 mW | 420 mW | 300 C/W | 260 C/W | -55 ~ +150 C | 300 C | 60 V | - | 100 nA | 10 A | -10 A | 1.0 V | - 0.2 mV/C | 1.5 (VGS=10V, ID=500mA) / 2.8 (VGS=4.5V, ID=200mA) | 80 mS | - pF | - pF | - pF | - nC | - nC | - nC | - ns | - ns | - ns | - ns | 0.85 V (IS=0.5A) | - |
| L2N7002SDW1T3G | Small Signal MOSFET | - | 10000/Tape&Reel | 60 V | 20 V | - | - | - | - | - | - | - | - | 60 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
Outline and Dimensions
| Dimension | Millimeters (Nominal) | Inches (Nominal) |
|---|---|---|
| A | 2.00 - 2.20 | 0.078 - 0.086 |
| A1 | 0.00 - 0.10 | 0.000 - 0.004 |
| b | 0.15 - 0.25 | 0.006 - 0.010 |
| c | 0.08 - 0.15 | 0.003 - 0.006 |
| D | 1.80 - 2.10 | 0.071 - 0.083 |
| E | 1.10 - 1.35 | 0.043 - 0.053 |
| E1 | 0.90 - 1.00 | 0.035 - 0.039 |
| e | 0.65 BSC | 0.026 BSC |
| L | 0.26 - 0.46 | 0.010 - 0.018 |
| L2 | 0.15 BSC | 0.006 BSC |
Soldering Footprint
| Dimension | Millimeters (Nominal) | Inches (Nominal) |
|---|---|---|
| A1 | 0.10 | 0.004 |
| A2 | 0.70 | 0.028 |
| b | 0.20 - 0.30 | 0.008 - 0.012 |
| c | 0.10 - 0.22 | 0.004 - 0.009 |
| D | 2.00 | 0.079 |
| E | 2.20 | 0.087 |
| E1 | 1.25 | 0.049 |
| e | 0.65 BSC | 0.026 BSC |
| L | 0.36 | 0.014 |
| L2 | 0.15 BSC | 0.006 BSC |
| aaa | 0.10 | 0.004 |
| bbb | 0.30 | 0.012 |
| ccc | 0.10 | 0.004 |
| ddd | 0.10 | 0.004 |
1912111437_LRC-L2N7002SDW1T1G_C383163.pdf
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