NPN silicon transistor LRC L9014SLT1G featuring complementary design to L9014 and automotive grade qualification
Key Attributes
Model Number:
L9014SLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L9014SLT1G
Package:
SOT-23
Product Description
Product Overview
The L9014 is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD. It is complementary to the L9014 transistor and is designed for various electronic applications. The device is available in SOT-23 package and offers reliable performance with specified electrical and thermal characteristics.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Type: NPN Silicon Transistor
- Complementary to: L9014
- Material Compliance: RoHS
- Automotive Qualification (S-Prefix): AEC-Q101 Qualified and PPAP Capable
Technical Specifications
| Symbol | Characteristic | Value | Unit | Conditions |
| MAXIMUM RATINGS | Collector-Emitter Voltage (VCEO) | 45 | V | |
| Collector-Base Voltage (VCBO) | 50 | V | ||
| Emitter-Base Voltage (VEBO) | 5 | V | ||
| Collector Current-Continuous (IC) | 100 | mA | ||
| THERMAL CHARACTERISTICS | Total Device Dissipation (PD) on FR-5 Board | 225 | mW | TA=25oC, Derate above 25oC: 1.8 mW/C |
| Thermal Resistance, Junction to Ambient (RJA) on FR-5 Board | 556 | C/W | ||
| Total Device Dissipation (PD) on Alumina Substrate | 300 | mW | TA=25oC, Derate above 25oC: 2.4 mW/C | |
| Thermal Resistance, Junction to Ambient (RJA) on Alumina Substrate | 417 | C/W | ||
| Junction and Storage Temperature (TJ, Tstg) | -55 to +150 | C | ||
| ELECTRICAL CHARACTERISTICS | Collector-Emitter Breakdown Voltage (V(BR)CEO) | 45 | V | IC=1.0mA |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | 5 | V | IE=100A | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | 50 | V | IC=100A | |
| Collector Cutoff Current (ICBO) | 100 | nA | VCB=40V | |
| Emitter Cutoff Current (IEBO) | 100 | nA | VEB=3V | |
| ON CHARACTERISTICS | DC Current Gain (HFE) | 150 - 1000 | IC=1mA, VCE=5V | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | - | 0.3 | V | IC=100mA, IB=5mA |
| DC Current Gain (HFE) | 150~1000 | See Note * (Q, R, S, T) |
1810010911_LRC-L9014SLT1G_C139130.pdf
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