PNP Silicon Transistor LRC LMBT3906WT1G Suitable for Automotive and Site Control Change Applications
Key Attributes
Model Number:
LMBT3906WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT3906WT1G
Package:
SC-70(SOT-323)
Product Description
Product Overview
The LMBT3906WT1G and S-LMBT3906WT1G are general-purpose PNP silicon transistors designed for automotive and other applications requiring unique site and control change requirements. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable. These devices are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (for S- variants)
Technical Specifications
| Parameter | Symbol | LMBT3906WT1G | S-LMBT3906WT1G | Unit | Min. | Typ. | Max. |
| MAXIMUM RATINGS | |||||||
| EmitterBase Voltage | VEBO | Vdc | -5 | ||||
| Collector Current Continuous | IC | mAdc | -200 | ||||
| CollectorEmitter Voltage | VCEO | Vdc | -40 | ||||
| CollectorBase Voltage | VCBO | Vdc | -40 | ||||
| THERMAL CHARACTERISTICS | |||||||
| Total Device Dissipation, FR5 Board @ TA = 25C | PD | mW | 833 | ||||
| Derate above 25C | mW/C | 1.2 | |||||
| Thermal Resistance, JunctiontoAmbient | RJA | C/W | 150 | ||||
| Junction and Storage temperature | TJ,Tstg | C | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||||||
| OFF CHARACTERISTICS | |||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | V | -40 | ||||
| CollectorBase Breakdown Voltage | VBR(CBO) | V | -40 | ||||
| EmitterBase Breakdown Voltage | VBR(EBO) | V | -5 | ||||
| Collector Cutoff Current | ICEX | nA | -50 | ||||
| Base Cutoff Current | IBL | nA | -50 | ||||
| ON CHARACTERISTICS | |||||||
| DC Current Gain | HFE | 60 | 80 | 100 | 300 | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | V | -0.25 | -0.95 | |||
| BaseEmitter Saturation Voltage | VBE(sat) | V | -0.4 | -0.85 | |||
| SMALLSIGNAL CHARACTERISTICS | |||||||
| CurrentGain Bandwidth Product | fT | MHz | 250 | ||||
| Output Capacitance | Cobo | pF | 4.5 | ||||
| Input Capacitance | Cibo | pF | 10 | ||||
| SWITCHING CHARACTERISTICS | |||||||
| Delay Time | td | ns | 35 | ||||
| Rise Time | tr | ns | 35 | ||||
| Storage Time | ts | ns | 225 | ||||
| Fall Time | tf | ns | 75 | ||||
| DEVICE MARKING AND ORDERING INFORMATION | |||||||
| Parameter | Symbol | LMBT3906WT1G | S-LMBT3906WT1G | Unit | |||
| Device Marking | 2A | 2A | |||||
| Shipping | 3000/Tape&Reel | 10000/Tape&Reel | |||||
| Package | SC70(SOT-323) | SC70(SOT-323) | |||||
1808272351_LRC-LMBT3906WT1G_C131778.pdf
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