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quality Low Threshold Voltage N Channel MOSFET LRC LSI1012N3T5G Suitable for High Speed Switching and Load Power Applications factory
quality Low Threshold Voltage N Channel MOSFET LRC LSI1012N3T5G Suitable for High Speed Switching and Load Power Applications factory

Low Threshold Voltage N Channel MOSFET LRC LSI1012N3T5G Suitable for High Speed Switching and Load Power Applications

Key Attributes
Model Number: LSI1012N3T5G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
RDS(on):
1.25Ω@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.8pF
Number:
1 N-channel
Output Capacitance(Coss):
5.8pF
Input Capacitance(Ciss):
43.5pF
Pd - Power Dissipation:
250mW
Gate Charge(Qg):
750pC@4.5V
Mfr. Part #:
LSI1012N3T5G
Package:
SOT-883-3
Product Description

Product Overview

The LSI1012N3T5G and S-LSI1012N3T5G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. These devices feature a low on-resistance of 0.7, low threshold voltage of 0.8V (typ), and fast switching speeds of 10 ns, making them suitable for low-voltage operation and high-speed circuits. The gate-source is ESD protected, and the S-prefix variant is AEC-Q101 qualified and PPAP capable for automotive and other demanding applications. They are RoHS compliant and Halogen Free. Applications include driving relays, solenoids, lamps, displays, memory, battery-operated systems, power supply converter circuits, and load/power switching in cell phones and pagers.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Product Family: LSI1012N3T5G, S-LSI1012N3T5G
  • Channel Type: N-Channel
  • Gate-Source Voltage Rating: 1.8-V
  • Gate-Source ESD Protection: Yes
  • Material Compliance: RoHS requirements and Halogen Free
  • Automotive Qualification (S-prefix): AEC-Q101 qualified and PPAP capable
  • Package Type: SOT883
  • Revision: Rev.D
  • Issue Date: May. 2021

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Notes
Drain-Source Breakdown Voltage V(BR)DSS 20 - - V (VGS = 0V, ID = 250A)
Gate-Source Voltage VGS - - 6 V
Gate Threshold Voltage VGS(th) 0.45 0.8 1.2 V (VDS = VGS , ID = 250A)
Gate-Body Leakage IGSS - 0.5 1 A (VDS = 0 V, VGS = 4.5 V)
Zero Gate Voltage Drain Current IDSS - - 5 A (VDS = 20 V, VGS = 0 V)
Zero Gate Voltage Drain Current (TJ = 85) IDSS - - 5 A (VDS = 20 V, VGS = 0 V, TJ = 85)
Drain-Source On-State Resistance RDS(on) - 0.7 - (VGS = 1.8 V, ID = 350 mA)
Drain-Source On-State Resistance RDS(on) - 0.7 - (VGS = 2.5 V, ID = 500 mA)
Drain-Source On-State Resistance RDS(on) - 0.41 - (VGS = 4.5 V, ID = 600 mA)
Diode Forward Voltage VSD - 0.53 0.7 V (IS = 150 mA, VGS = 0 V)
Total Gate Charge Qg - 225 - pC (VDS = 10 V, VGS = 4.5 V, ID = 250 mA)
Gate-Source Charge Qgs - 75 - pC (VDS = 10 V, VGS = 4.5 V, ID = 250 mA)
Gate-Drain Charge Qgd - 5.8 - pC (VDS = 10 V, VGS = 4.5 V, ID = 250 mA)
Turn-On Delay Time td(on) - 10 - ns (VDD = 10 V, RL = 47,ID=200 mA, VGEN = 4.5 V, RG = 10)
Rise Time tr - 25 - ns (VDD = 10 V, RL = 47,ID=200 mA, VGEN = 4.5 V, RG = 10)
Turn-Off Delay Time td(off) - - 75 ns (VDD = 10 V, RL = 47,ID=200 mA, VGEN = 4.5 V, RG = 10)
Fall Time tf - - 11 ns (VDD = 10 V, RL = 47,ID=200 mA, VGEN = 4.5 V, RG = 10)
Input Capacitance Ciss - 43.5 - pF (VDS = 16 V, VGS = 0 V, f = 1 MHz)
Output Capacitance Coss - 5.8 - pF (VDS = 16 V, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance Crss - 5.8 - pF (VDS = 16 V, VGS = 0 V, f = 1 MHz)
Continuous Drain Current (TJ = 150) ID - 500 - mA (Note 2)
Continuous Drain Current (TA = 25) ID - 600 - mA (Note 2)
Continuous Drain Current (TA = 85) ID - 350 - mA (Note 2)
Pulsed Drain Current IDM - 1000 - mA (Note 1)
Continuous Source Current (diode conduction) IS - 275 - mA (Note 2)
Maximum Power Dissipation PD - 250 - mW (Note 2)
Thermal Resistance, Junction to Ambient RJA - 500 - /W (Note 2)
Operating Junction and Storage Temperature Range TJ , Tstg -55 - +150
Device Marking LSI1012N3T5G
Device Marking (Automotive) S-LSI1012N3T5G
Shipping 10000/Tape&Reel

Notes:

  • 1. Pulse width limited by maximum junction temperature. Pulse test; pulse width 300 s, duty cycle 2%.
  • 2. Surface Mounted on FR4 Board. Guaranteed by design, not subject to production testing.

2410010130_LRC-LSI1012N3T5G_C383274.pdf

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