General purpose amplifier transistor luJing MMBT2222A with epitaxial planar die and high reliability
Key Attributes
Model Number:
MMBT2222A
Product Custom Attributes
Current - Collector Cutoff:
10nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description
Product Overview
General Purpose Amplifier with Epitaxial planar die construction. Features high stability and high reliability. Available in SOT-23 plastic encapsulation.
Product Attributes
- Case Style: SOT-23
- Material: Molded Plastic
- Mounting Position: Any
- Color: Not Specified
- Brand: Not Specified
- Origin: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector - Base Voltage | VCBO | 7 | V | |||
| Collector - Emitter Voltage | VCEO | 40 | V | |||
| Emitter - Base Voltage | VEBO | 6 | V | |||
| Collector Current - Continuous | IC | 600 | mA | |||
| Collector Power Dissipation | PD | 150 | mW | |||
| Thermal resistance from junction to ambient | RJA | 417 | C/W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Collector Base Breakdown Voltage | V(BR)CBO | IC=10uA, IE=0 | 7 | V | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | IC=10mA, IB=0 | 40 | V | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | IE=10uA, IC=0 | 6 | V | ||
| Collector cutoff current | ICBO | VCE=7V, VEB off | 10 | nA | ||
| Collector cut off current | ICEX | VCE=40V, VBE off | 10 | nA | ||
| Emitter cutoff current | IEBO | VEB=6V, IC off | 10 | nA | ||
| Transition frequency | fT | VCE=5V, IC=10mA | 100 | MHz | ||
| Delay time | td | VCC=5V, IC=10mA, IB1=1mA | 1.00 | ns | ||
| Rise time | tr | VCC=5V, IC=10mA, IB1=1mA | 0.3 | ns | ||
| Storage time | ts | VCC=5V, IC=10mA, IB1=1mA, IB2=-1mA | ns | |||
| Fall time | tf | VCC=5V, IC=10mA, IB1=1mA, IB2=-1mA | ns | |||
| Collector emitter saturation voltage | VCE(sat) | IC=10mA, IB=1mA | 0.3 | V | ||
| Base emitter saturation voltage | VBE(sat) | IC=10mA, IB=1mA | 0.9 | V | ||
| Current gain | hFE | VCE=5V, IC=10mA | 200 |
2507081835_luJing-MMBT2222A_C49318129.pdf
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