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quality Surface Mount NPN Transistor LRC LMUN2240LT1G RoHS Compliant Silicon Device with Reduced Board Space factory
quality Surface Mount NPN Transistor LRC LMUN2240LT1G RoHS Compliant Silicon Device with Reduced Board Space factory

Surface Mount NPN Transistor LRC LMUN2240LT1G RoHS Compliant Silicon Device with Reduced Board Space

Key Attributes
Model Number: LMUN2240LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
61.1kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2240LT1G
Package:
SOT-23
Product Description

Product Overview

The LMUN2240LT1G and S-LMUN2240LT1G are NPN Silicon Surface Mount Transistors with a monolithic bias resistor network. These devices simplify circuit design, reduce board space, and lower component count. The 'S-' prefix variants are designed for automotive and other applications requiring unique site and control change requirements, and are AEC-Q101 qualified and PPAP capable. Both models are RoHS compliant and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material: Silicon
  • Compliance: RoHS requirements and Halogen Free
  • Certifications: AEC-Q101 qualified and PPAP capable (S- prefix variants)
  • Package Type: SOT23 (TO-236)

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping Collector-Base Voltage (VCBO) Collector-Emitter Voltage (VCEO) Collector Current - Continuous (IC) Total Device Dissipation (PD) Thermal Resistance (RJA) Junction and Storage Temperature (TJ, Tstg) Input Voltage (Vin)
LMUN2240LT1G A8T 47 3000/Tape&Reel 50 V 50 V 100 mA 246 mW @ TA = 25C (FR-5 Board) 508 C/W -55 ~ +150 C -6 ~ +40 V
S-LMUN2240LT1G A8T 47 10000/Tape&Reel 50 V 50 V 100 mA 246 mW @ TA = 25C (FR-5 Board) 508 C/W -55 ~ +150 C -6 ~ +40 V
LMUN2240LT3G A8T 47 1.5 508 50 V 50 V 100 mA 246 mW @ TA = 25C (FR-5 Board) 508 C/W -55 ~ +150 C -6 ~ +40 V
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) VBR(CEO) 50 - - V
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) VBR(CBO) 50 - - V
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nA
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nA
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - mA
ON CHARACTERISTICS (Note 2.)
DC Current Gain (IC = 5 mA, VCE = 10 V) HFE - 160 - -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) VCE(sat) - - 0.25 V
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL =1.0K) VOL - - 0.2 V
Output Voltage (on) (VCC = 5.0 V, VB = 0.25 V, RL =1.0K) VOH - - - V
Input Resistor R1 - 32.9 61.1 K
Dimension X Y A B C
SOT-23 (mm) 0.80 0.90 2.00 0.95 0.95
DIM MIN NOR MAX
A 0.89 - 1.12
A1 0.01 - 0.10
A2 0.88 0.95 1.02
b 0.30 - 0.50
b1 0.30 0.40 0.45
c 0.08 - 0.20
c1 0.08 0.10 0.16
D 2.80 2.90 3.04
E 2.10 - 2.64
E1 1.20 1.30 1.40
e 0.95BSC - -
e1 1.90BSC - -
L 0.40 0.46 0.60
L1 0.54REF - -
0 8

2404091719_LRC-LMUN2240LT1G_C5273262.pdf

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