Low Current Rectification Diode LRC LRB521S-40T1G Schottky Barrier Type in Small Surface Mount Package
Key Attributes
Model Number:
LRB521S-40T1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
20uA
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
300mV
Current - Rectified:
200mA
Mfr. Part #:
LRB521S-40T1G
Package:
SOD-523
Product Description
Product Overview
The LRB521S-40T1G is a Schottky barrier diode designed for low current rectification and high-speed switching applications. It features an extremely small surface mounting type (SOD523) with guaranteed IO=200mA despite its size, and offers low forward voltage (VF). This diode is constructed using silicon epitaxial planar technology.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Construction: Silicon epitaxial planar
- Package: SOD-523
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)
- RoHS Compliance: Yes
Technical Specifications
| Parameter | Symbol | LRB521S-40T1G (Typical) | Unit | Conditions |
| DC reverse voltage | VR | 40 | V | |
| Mean rectifying current | IO | 200 | mA | (TA = 25C) |
| Peak forward surge current | IFSM | 4 | A | *60Hz for 1 cycle |
| Junction temperature | Tj | 125 | C | |
| Storage temperature | Tstg | -55~+125 | C | |
| Forward voltage | VF | 0.30 | V | IF=10mA |
| Forward voltage | VF | 0.45 | V | IF=100mA |
| Forward voltage | VF | 0.52 | V | IF=200mA |
| Reverse current | IR | 20 | A | VR=10V |
| Reverse current | IR | 90 | A | VR=40V |
| ESD break down voltage | - | 8 | C | C=100pF,R=1.5K forward and reverse:1 time |
| Capacitance between terminals | Ct | 27.2 | pF | VR=40V, f=1MHz, Ta=25C (AVE: 27.2pF, n=30pcs) |
2410010303_LRC-LRB521S-40T1G_C135802.pdf
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