Split Gate Trench MOSFET MCC MCG53N06AHE3 TP with High Density Cell Design and Low RDS ON Resistance

Key Attributes
Model Number: MCG53N06AHE3-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
53A
RDS(on):
7.8mΩ@4.5V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
20pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
1.85nF@30V
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
MCG53N06AHE3-TP
Package:
DFN3333
Product Description

Micro Commercial Components Corp. - Split Gate Trench MOSFET

Product Overview
This Split Gate Trench MOSFET is designed for high-performance applications, featuring AEC-Q101 qualification for automotive and industrial reliability. Its advanced Split Gate Trench MOSFET technology and high-density cell design contribute to low RDS(ON) and excellent heat dissipation. The device is Moisture Sensitivity Level 1 compliant and RoHS compliant, making it suitable for a wide range of electronic systems where performance, reliability, and environmental considerations are paramount.

Product Attributes

  • AEC-Q101 Qualified
  • Split Gate Trench MOSFET Technology
  • Moisture Sensitivity Level 1
  • Halogen Free (Green Device)
  • Epoxy Meets UL 94 V-0 Flammability Rating
  • Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 60 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.2 1.7 2.5 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 5.8 m
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 7.8 11 m
Gate Resistance Rg VDS=0V,VGS=0V,f=1MHZ 1.6
Continuous Body Diode Current IS 53 A
Diode Forward Voltage VSD VGS=0V, IS=20A 1.3 V
Reverse Recovery Time trr IF=20A, dIF/dt=500A/s 30 ns
Reverse Recovery Charge Qrr IF=20A, dIF/dt=500A/s 18 nC
Input Capacitance Ciss VDS=30V,VGS=10V,ID=20A 1850 pF
Output Capacitance Coss VDS=30V,VGS=0V,f=1MHz 440 pF
Reverse Transfer Capacitance Crss VDS=30V,VGS=0V,f=1MHz 20 pF
Total Gate Charge Qg VGS=10V, VDS=30V, RL=2.5, RGEN=3 31 nC
Gate-Source Charge Qgs VGS=10V, VDS=30V, RL=2.5, RGEN=3 6 nC
Gate-Drain Charge Qg VGS=10V, VDS=30V, RL=2.5, RGEN=3 5 nC
Turn-On Delay Time td(on) VGS=10V, VDS=30V, RL=2.5, RGEN=3 10 ns
Turn-On Rise Time tr VGS=10V, VDS=30V, RL=2.5, RGEN=3 34 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=30V, RL=2.5, RGEN=3 26.2 ns
Turn-Off Fall Time tf VGS=10V, VDS=30V, RL=2.5, RGEN=3 45 ns
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance Rth(J-C) Junction to Case(2) 2.8 C/W
Maximum Ratings: Drain-Source Voltage VDS 60 V
Maximum Ratings: Gate-Source Voltage VGS 20 V
Maximum Ratings: Total Power Dissipation PD 160 W
Maximum Ratings: Pulsed Drain Current IDM (3) 162 A
Maximum Ratings: Continuous Drain Current ID (2) 53 A
Maximum Ratings: Single Pulsed Avalanche Energy EAS (4) 162 mJ

Notes:
1. Halogen free Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2. Surface Mounted on 1 in pad area, t 10 sec.
3. Repetitive rating; pulse width limited by max. junction temperature.
4. VDD=50V, RG=25, L=1mH, IAS=18A.

Ordering Information
Device Packing: TAPE & REEL, 5000 PCS/REEL

Dimensions

Symbol DIM INCHES MM NOTE
A 0.130 (0.122-0.138) 3.30 (3.10-3.50)
B 0.130 (0.122-0.138) 3.30 (3.10-3.50)
C 0.035 (0.028-0.043) 0.90 (0.70-1.10)
C1 0.055 (0.047-0.063) 1.40 (1.20-1.60)
C2 0.020 (0.016-0.024) 0.50 (0.40-0.60)
D 0.039 (0.031-0.047) 1.00 (0.80-1.20)
E 0.024 (0.016-0.031) 0.60 (0.40-0.80)
F 0.012 (0.008-0.016) 0.30 (0.20-0.40)
G 0.000 (Ref) 0.00 (Ref)
H 0.039 (0.031-0.047) 1.00 (0.80-1.20)
1 0.130 BSC 3.30 BSC
2 0.130 BSC 3.30 BSC
3 0.130 BSC 3.30 BSC
4 0.039 BSC 1.00 BSC
5 0.039 BSC 1.00 BSC
6 0.039 BSC 1.00 BSC
7 0.039 BSC 1.00 BSC
8 0.039 BSC 1.00 BSC

Internal Structure and Marking Code
DFN3333


2409302332_MCC-MCG53N06AHE3-TP_C7463941.pdf
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