N channel MOS planar transistor MASPOWER MS12N120HGC0 ideal for pulse power and power conversion
Key Attributes
Model Number:
MS12N120HGC0
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
12A
RDS(on):
1.1Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 N-channel
Output Capacitance(Coss):
234pF
Input Capacitance(Ciss):
3.18nF
Pd - Power Dissipation:
750W
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
MS12N120HGC0
Package:
TO-247
Product Description
Product Overview
The MS12N120HGC0 is a high-performance N-Channel MOS planar process power transistor from Maspower, designed for high voltage applications. It features an ultra-low RDS(on) due to its high-density cell design, low gate charge, and improved dv/dt capability, making it ideal for efficient power conversion and pulse power applications.
Product Attributes
- Brand: Maspower
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | VDSS | 1200 | V | |||
| VGSS | ±30 | V | ||||
| ID | 12 | A | ||||
| IDM | 30 | A | ||||
| EAS | L = 9.6 mH, IAS = 6 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C | 173 | mJ | |||
| PD | TC=25°C Derate above 25°C | 750 | W | |||
| TJ,TSTG | -55 | +150 | °C | |||
| Electrical Characteristics | BVDSS | ID=1mA,VGS=0V | 1200 | - | - | V |
| IDSS | VDS=VDSS,VGS=0V | - | 0.02 | 1 | µA | |
| IGSS | VGS=±30V,VDS=0V | - | - | ±100 | nA | |
| VGS(th) | VDS=VGS,ID=250µA | 4 | - | 5 | V | |
| RDS(ON) | VGS=10V,ID=1A | - | 1.1 | 1.5 | Ω | |
| gfs | VDS=20V,ID=6A (note3) | - | 16 | - | S | |
| Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 3180 | - | pF | |
| Coss | - | 234 | - | pF | ||
| Crss | - | 19 | - | pF | ||
| Switching Characteristics | td(on) | VDS=600V,ID=6A, RG=25Ω,VGS=10V (note3,4) | - | 65 | - | ns |
| tr | - | 58 | - | ns | ||
| td(Off) | - | 156 | - | ns | ||
| tf | - | 51 | - | ns | ||
| Total Gate Charge | Qg | VDS=600V,ID=6A, VGS=10V (note3,4) | - | 66 | - | nC |
| Qgs | - | 27 | - | nC | ||
| Qgd | - | 24 | - | nC | ||
| Drain-Source Diode Characteristics | VSD | VGS=0V,IS=12A | 0.5 | - | 1.2 | V |
| IS | TC=25°C | - | - | 12 | A | |
| Trr | IS=6A,dI/dT=100A/μS VR=100V,VGS=0V (note4) | - | 0.6 | - | μS | |
| Qrr | - | 5.7 | - | μC | ||
| Thermal Characteristics | Rth(j-C) | 0.2 | °C/W | |||
| Rth(j-A) | 36 | °C/W |
2411261919_MASPOWER-MS12N120HGC0_C3825160.pdf
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