MDD Microdiode Semiconductor MMBT5551 NPN transistor ideal for medium power amplification switching
Key Attributes
Model Number:
MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description
Product Overview
The MMBT5551 is an NPN transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5401 and is ideal for medium power amplification and switching applications.
Product Attributes
- Brand: Microdiode
- Package: SOT-23
- Marking: G1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 180 | V | |||
| Collector-Emitter Voltage | VCEO | 160 | V | |||
| Emitter-Base Voltage | VEBO | IE=10A, IC=0 | 6 | V | ||
| Collector Current | IC | 0.6 | A | |||
| Collector Power Dissipation | PC | Ta=25 | 0.3 | W | ||
| Thermal Resistance (Junction to Ambient) | RJA | 416 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100A, IE=0 | 180 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | |||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector Cut-off Current | ICBO | VCB=120V, IE=0 | 180 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=4V, IC=0 | 50 | nA | ||
| DC Current Gain (Rank L) | hFE(1) | VCE=5V, IC=1mA | 100 | 200 | ||
| DC Current Gain (Rank H) | hFE(2) | VCE=5V, IC=10mA | 200 | 300 | ||
| DC Current Gain | hFE(3) | VCE=5V, IC=50mA | 300 | |||
| Collector-Emitter Saturation Voltage | VCE(sat)1 | IC=10mA, IB=1mA | 0.15 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat)2 | IC=50mA, IB=5mA | 0.2 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat)1 | IC=10mA, IB=1mA | 1 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat)2 | IC=50mA, IB=5mA | 1 | V | ||
| Transition Frequency | fT | VCE=10V, IC=10mA,f=30MHz | 100 | MHz | ||
| Collector Output Capacitance | Cob | VCB=10V, IE=0,f=1MHz | 6 | pF |
2411211939_MDD-Microdiode-Semiconductor-MMBT5551_C408396.pdf
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