MDD Microdiode Semiconductor MDD2002KT 20V N channel MOSFET suitable for load switching applications
Key Attributes
Model Number:
MDD2002KT
Product Custom Attributes
Mfr. Part #:
MDD2002KT
Package:
SOT-523
Product Description
Product Description
This 20V N-channel MOSFET is based on MDD's unique device design, achieving low RDS(on), fast switching, and good ESD rating performance. It is suitable for load switching in portable devices, battery-powered systems, DC-DC converters, and LCD display inverters.
Product Attributes
- Brand: Microdiode
- Origin: Shenzhen
- Certifications: JESD22-A114-B ESD rating of class 2 per human body model.
Technical Specifications
| Parameter | Symbol | Condition | Unit | Min | Typ | Max |
| Absolute Maximum Ratings (TA =25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | V | 20 | |||
| Gate-Source Voltage | VGS | V | -10 | 10 | ||
| Continuous Drain Current (Note 1) | ID | A | 0.75 | |||
| Pulsed Drain Current (Note 1) | IDM | A | 3.8 | |||
| Power Dissipation | PD | W | 0.15 | |||
| Storage Temperature | Tstg | C | -55 | 150 | ||
| Junction Temperature | TJ | C | 150 | |||
| Thermal Resistance, Junction-Ambient (Note 2) | RJA | C/W | 83 | |||
| Electrical Characteristics (TA=25C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | V | 20 | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | V | 0.3 | 0.65 | 1 |
| Gate-Source Leakage Current | IGSS | VGS=10V, VDS=0V | A | 1 | ||
| Drain-Source Leakage Current | IDSS | VDS=20V, VGS=0V | A | 10 | ||
| Drain-Source Leakage Current | IDSS | VDS=20V, VGS=0V | A | 1 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=0.75A | m | 250 | 350 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=0.3A | m | 380 | 450 | |
| Switching Characteristics (VGS =4.5V, VDS =10V, ID=0.5A, RG=3) | ||||||
| Turn on Delay Time | td(on) | ns | 6.7 | |||
| Turn on Rise Time | tr | ns | 4.8 | |||
| Turn Off Fall Time | tf | ns | 7.4 | |||
| Turn Off Delay Time | td(off) | ns | 17.3 | |||
| Source Drain Diode Characteristics | ||||||
| Source drain current(Body Diode) | IS | VGS=0V | A | 0.75 | ||
| Drain-Source Diode Forward Voltage | VSD | IS=0.75A | V | 0.8 | 1.2 | |
| Dynamic Electrical Characteristics (VDS =10V, ID=0.3A, f=1.0MHz) | ||||||
| Input Capacitance | Ciss | VGS=0V | pF | 79 | ||
| Output Capacitance | Coss | VGS=0V | pF | 13 | ||
| Reverse Transfer Capacitance | Crss | VGS=0V | pF | 5 | ||
| Total Gate Charge | Qg | VGS=4.5V | nC | 9 | ||
| Gate Source Charge | Qgs | VGS=4.5V | nC | 1.2 | ||
| Gate Drain Charge | Qgd | VGS=4.5V | nC | 0.8 | ||
2512021845_MDD-Microdiode-Semiconductor-MDD2002KT_C53069231.pdf
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