Power Field Effect Transistor MATSUKI ME2326A Featuring Low On Resistance and High Current Capability

Key Attributes
Model Number: ME2326A
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
400mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5Ω@4.5V,250mA
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
5.6pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
361pF@15V
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
4.1nC@4.5V
Mfr. Part #:
ME2326A
Package:
SOT-23
Product Description

Product Overview

The ME2326A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is suitable for power management in notebooks, DC/DC converters, load switches, and LCD display inverters.

Product Attributes

  • Brand: Matsuki Electric/Force mos
  • Product Line: ME2326A/ME2326A-G
  • Package: SOT-23
  • Certifications: Pb-free (ME2326A), Green product-Halogen free (ME2326A-G)

Technical Specifications

ParameterSymbolLimitUnitConditions
Maximum RatingsVDS250V
VGS20V
ID (TA=25)0.4A
ID (TA=70)0.3A
IDM1.6APulsed Drain Current
PD (TA=25)1.4WMaximum Power Dissipation
PD (TA=70)0.9WMaximum Power Dissipation
Electrical CharacteristicsBVDSS250VVGS=0V, ID=250A
VGS(th)1.0 - 3.0VVDS=VGS, ID=250A
IGSS100nAVDS=0V, VGS=20V
IDSS1AVDS=250V, VGS=0V
RDS(ON)4.5 - 5.5VGS=10V, ID=250mA
4.5 - 5.5VGS=4.5V, ID=250mA
VSD0.8 - 1.2VIS=250mA, VGS=0V
Qg11.2nCVDS=10V, VGS=10V, ID=1.2A
Dynamic CharacteristicsQgs4.1nCVDS=10V, VGS=4.5V, ID=1.2A
Qgd0.9nCVDS=10V, VGS=4.5V, ID=1.2A
Ciss361pFVDS=15V, VGS=0V, f=1MHz
Coss16pFVDS=15V, VGS=0V, f=1MHz
Crss5.6pFVDS=15V, VGS=0V, f=1MHz
Switching Characteristicstd(on)9.7nsVDD=25V, RL=25, RG=25, VGEN=10V
tr25.6nsVDD=25V, RL=25, RG=25, VGEN=10V
td(off)236nsVDD=25V, RL=25, RG=25, VGEN=10V
tf275nsVDD=25V, RL=25, RG=25, VGEN=10V
Thermal CharacteristicsTJ150Operating Junction Temperature
RJA90/WThermal Resistance-Junction to Ambient*

2411220101_MATSUKI-ME2326A_C709745.pdf

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