Low Voltage Low Current PNP Small Signal Transistor MCC BCW68H-TP with Automatic Insertion Capability
Key Attributes
Model Number:
BCW68H-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCW68H-TP
Package:
SOT-23
Product Description
Product Overview
The BCW68H is a PNP Small Signal Transistor designed for automatic insertion. It offers low current and low voltage operation with an epitaxial planar die construction. This device is halogen-free, moisture sensitive level 1, and meets UL 94 V-0 flammability rating. It is lead-free and RoHS compliant.
Product Attributes
- Brand: MCCSEMI
- Construction: Epitaxial Planar Die
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity: Level 1
- Compliance: Lead Free Finish/RoHS Compliant
- Device Type: PNP Small Signal Transistor
- Features: Ideally Suited for Automatic Insertion, Low Current, Low Voltage, Halogen Free Green Device
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector-Base Voltage | VCBO | -60 | V | |
| Collector-Emitter Voltage | VCEO | -45 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Continuous Collector Current | IC | -800 | mA | Valid Provided that Leads are Kept at Ambient Temperature. |
| Power Dissipation | PD | 330 | mW | TS=79C |
| Peak Collector Current | ICM | -1000 | mA | |
| Continuous Base Current | IB | -100 | mA | |
| Peak Base Current | IBM | -200 | mA | |
| Operating Junction Temperature Range | -55 to +150 | |||
| Storage Temperature Range | -55 to +150 | |||
| Thermal Resistance Junction to Ambient | 285 | /W | Note 2 | |
| Thermal Resistance Junction to Soldering Point | 215 | /W | ||
| Collector-Base Cutoff Current | ICBO | -20 | nA | VCB=-45V, IE=0 |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.25 | V | IC=-100mA, IB=-10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -1.0 | V | IC=-500mA, IB=-50mA |
| Emitter-Base Capacitance | CEB | 60 | pF | VEB=-0.5V, f=1MHz |
| DC Current Gain | hFE(3) | 100 | VCE=-2V, IC=-500mA | |
| Collector-Base Cutoff Current | ICBO | -20 | nA | VCB=-45V, IE=0, TA=150C |
| Emitter-Base Cutoff Current | IEBO | -20 | A | VEB=-4V, IC=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | V | IC=-10A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-10A, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | V | IC=-10mA, IB=0 |
| DC Current Gain | hFE(1) | 180 | VCE=-2V, IC=-100mA | |
| DC Current Gain | hFE(2) | 250 | VCE=-10V,IC=-20mA | |
| Transition Frequency | fT | 100 | MHz | VCE=-5V, IC=-10mA, f=100MHz |
| Collector-Base Capacitance | CCB | 6 | pF | VCB=-10V, f=1MHz |
2410010102_MCC-BCW68H-TP_C2975486.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
