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quality heat dissipation MCC MCAC95N06Y-TP N channel MOSFET with Split Gate Trench technology and UL 94 V 0 rating factory
quality heat dissipation MCC MCAC95N06Y-TP N channel MOSFET with Split Gate Trench technology and UL 94 V 0 rating factory

heat dissipation MCC MCAC95N06Y-TP N channel MOSFET with Split Gate Trench technology and UL 94 V 0 rating

Key Attributes
Model Number: MCAC95N06Y-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
95A
RDS(on):
3.4mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
1.25nF
Input Capacitance(Ciss):
5.95nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
93nC@10V
Mfr. Part #:
MCAC95N06Y-TP
Package:
DFN5060
Product Description

Product Overview

The MCAC95N06Y is an N-channel MOSFET featuring Split Gate Trench MOSFET Technology for enhanced performance. It offers excellent heat dissipation, a high-density cell design for low RDS(on), and is housed in a DFN5060 package. This device meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1 compliant, and is Halogen Free and RoHS Compliant. It is suitable for applications requiring efficient power management and robust thermal performance.

Product Attributes

  • Brand: MCC
  • Model: MCAC95N06Y
  • Technology: N-Channel MOSFET, Split Gate Trench MOSFET
  • Package: DFN5060
  • Certifications: UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 1, Halogen Free, RoHS Compliant
  • Lead Finish: Lead Free

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID TC=25C 95 A
Continuous Drain Current ID TC=100C 60 A
Pulsed Drain Current IDM 390 A
Avalanche Energy EAS 500 mJ
Total Power Dissipation PD 120 W
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Thermal Resistance Junction to Ambient RJA TA=25C (Note 2) 20 C/W
Thermal Resistance Junction to Case RJC (Note 6) 1.04 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 60 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.2 1.8 2.2 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 2.1 2.5 m
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=15A 2.7 3.4 m
Continuous Body Diode Current IS 95 A
Diode Forward Voltage VSD IS=25A, VGS=0V 1.2 V
Reverse Recovery Time trr IS=25A, di/dt=100A/s 68 ns
Reverse Recovery Charge Qrr 73 nC
Input Capacitance Ciss VDS=25V, VGS=0V, f=100KHz 5950 pF
Output Capacitance Coss 1250 pF
Reverse Transfer Capacitance Crss 85 pF
Total Gate Charge Qg VGS=10V, VDD=30V, ID=25A, RGEN=2 93 nC
Gate-Source Charge Qgs 17 nC
Gate-Drain Charge Qg d 14 nC
Turn-On Delay Time td(on) 22.5 ns
Turn-On Rise Time tr 6.7 ns
Turn-Off Delay Time td(off) 80.3 ns
Turn-Off Fall Time tf 26.9 ns
DIM INCHES MM
A 0.031 - 0.047 0.80 - 1.20
B 0.193 - 0.222 4.90 - 5.64
C 0.232 - 0.250 5.90 - 6.35
D 0.232 - 0.250 5.90 - 6.35
E 0.148 - 0.167 3.75 - 4.25
F 0.126 - 0.154 3.20 - 3.92
G 0.189 - 0.213 4.80 - 5.40
H 0.222 - 0.239 5.65 - 6.06
K 0.045 - 0.059 1.15 - 1.50
J 0.012 - 0.020 0.30 - 0.50
L 0.046 - 0.054 1.17 - 1.37
M 0.012 - 0.028 0.30 - 0.71
N 0.016 - 0.028 0.40 - 0.71
(Pin 1 Indicator) 0.010 TYP. 0.254 TYP.

Ordering Information

Device Packing Part Number
MCAC95N06Y Tape&Reel: 5Kpcs/Reel MCAC95N06Y-TP

2410010102_MCC-MCAC95N06Y-TP_C3288282.pdf

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