Low on resistance P channel transistor MATSUKI ME60P06T ideal for DC DC converters and load switches
Product Overview
The ME60P06T is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Variants: ME60P06T (Pb-free), ME60P06T-G (Green product-Halogen free)
- Package Type: TO-220
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -60 | V | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -3 | V | ||
| Gate Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | A | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID= -30A | 13 | 16.5 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID= -20A | 15 | 20.5 | m | ||
| Diode Forward Voltage | VSD | IS=-30A, VGS=0V | -1.0 | -1.5 | V | ||
| Total Gate Charge | Qg | VDS=-30V, VGS=-10V, ID=-50A | 98.6 | nC | |||
| Total Gate Charge | Qg | VDS=-30V, VGS=-4.5V, ID=-50A | 50.1 | nC | |||
| Gate-Source Charge | Qgs | 15.9 | |||||
| Gate-Drain Charge | Qgd | 25.2 | |||||
| Input capacitance | Ciss | VDS=-15V, VGS=0V, F=1MHz | 4480 | pF | |||
| Output Capacitance | Coss | 427 | |||||
| Reverse Transfer Capacitance | Crss | 355 | |||||
| Turn-On Delay Time | td(on) | VDS=-30V, RL =30, VGEN=-10V, RG=6 | 50.7 | ns | |||
| Turn-On Rise Time | tr | 18.1 | |||||
| Turn-Off Delay Time | td(off) | 221 | |||||
| Turn-Off Fall Time | tf | 60.1 | |||||
| Continuous Drain Current | ID | TC=25* | -55.3 | A | |||
| Continuous Drain Current | ID | TC=70* | -46.3 | A | |||
| Pulsed Drain Current | IDM | -221 | A | ||||
| Maximum Power Dissipation | PD | TC=25* | 90.9 | W | |||
| Maximum Power Dissipation | PD | TC=70* | 63.6 | W | |||
| Operating Junction Temperature | TJ | -55 | 175 | ||||
| Thermal Resistance-Junction to Case | RJC | 1.65 | /W |
2411192312_MATSUKI-ME60P06T_C709771.pdf
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