PNP Silicon Transistor Minos B772 Suitable for Industrial Electronic Circuits and Audio Amplification
Key Attributes
Model Number:
B772
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
10W
Transition Frequency(fT):
80MHz
Type:
PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
B772
Package:
TO-252
Product Description
Product Overview
This PNP Silicon Transistor is designed for audio amplification and switching power amplification applications. It offers reliable performance with defined electrical characteristics and is suitable for various industrial and electronic circuits requiring amplification or switching functions.
Product Attributes
- Brand: MNS-KX
- Type: PNP Silicon Transistor
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Description | Min | Typ | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Collector-Base Cut-off Current | ICBO | -1.0 | A | VCB=-30V, IE=0 | |||
| Emitter-Base Cut-off Current | IEBO | -0.3 | -1.0 | A | VEB=-5V, IC=0 | ||
| DC Current Gain | hFE | 55 | 400 | VCE=-2V, IC=-1A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | -2.0 | V | IC=-2A, IB=-0.2A | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.0 | V | IC=-2A, IB=-0.2A | |||
| Common-Base Output Capacitance | Cob | 55 | pF | VCB=-10V, IE=0, f=1MHz | |||
| Characteristic Frequency | fT | 80 | MHz | VCE=-5V, IE=-0.1A | |||
| Collector-Base Voltage | VCBO | -40 | V | ||||
| Collector-Emitter Voltage | VCEO | -30 | V | ||||
| Emitter-Base Voltage | VEBO | -5 | V | ||||
| Collector Current | IC | -3 | A | ||||
| Base Current | IB | 0.6 | A | ||||
| Collector Power Dissipation (Tc=25) | PC | 10 | W | ||||
| Collector Power Dissipation (TA=25) | PC | 1 | W | ||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Junction Temperature | Tj | 150 |
| Grading | R | Q | P | E |
|---|---|---|---|---|
| hFE Range | 60120 | 100200 | 160320 | 200400 |
Pin Assignment (TO-252):
- 1 - Base (B)
- 2 - Collector (C)
- 3 - Emitter (E)
Notes:
- Exceeding the maximum ratings may cause permanent damage to the device. Please do not exceed the absolute maximum ratings during circuit design.
- When installing a heat sink, pay attention to torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777
2504101957_Minos-B772_C19189964.pdf
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