NPN Transistor MCC MMS8050-H-TP Silicon Plastic Encapsulated with UL 94 V0 Flammability Rating and Lead Free Finish
Key Attributes
Model Number:
MMS8050-H-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMS8050-H-TP
Package:
SOT-23
Product Description
MMS8050 NPN Silicon Plastic-Encapsulate Transistor
The MMS8050 is an NPN silicon plastic-encapsulated transistor designed for various electronic applications. It features a wide operating and storage temperature range of -55 to +150, a thermal resistance of 417/W Junction to Ambient, and a power dissipation of 300 mW. This transistor is Halogen Free available upon request, has a Moisture Sensitivity Level 1, and its epoxy meets UL 94 V-0 flammability rating. It is lead-free finished and RoHS compliant.
Product Attributes
- Brand: MCCSEMI.COM
- Material: Silicon Plastic-Encapsulate
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
- Special Features: Halogen Free Available Upon Request, Moisture Sensitivity Level 1
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | @ 25C Unless Otherwise Specified |
| Collector-Emitter Voltage | VCEO | 25 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | 5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | 500 | mA | @ 25C Unless Otherwise Specified |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | V | IC=100A, IE=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | V | IC=1mA, IB=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100A, IC=0 |
| Collector Cutoff Current | ICEO | 0.1 | A | VCB=40V, IE=0 |
| Emitter Cutoff Current | IEBO | 0.1 | A | VEB=5V, IC=0 |
| DC Current Gain | hFE(1) | 120-350 | VCE=1V, IC=50mA | |
| DC Current Gain | hFE(2) | 50 | VCE=1V, IC=500mA | |
| Transition Frequency | fT | 150 | MHz | VCE=6V, IC=20mA, f=30MHz |
| Base-Emitter Voltage | VBE | 1.2 | V | IC=500mA, IB=50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6 | V | IC=500mA, IB=50mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.4 | V | IC=500mA, IB=50mA |
2304140030_MCC-MMS8050-H-TP_C668971.pdf
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