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quality NPN Silicon Plastic Encapsulate Transistor MCC MMSS8050-H-TP SOT23 Package 1.5A Collector Current factory
quality NPN Silicon Plastic Encapsulate Transistor MCC MMSS8050-H-TP SOT23 Package 1.5A Collector Current factory

NPN Silicon Plastic Encapsulate Transistor MCC MMSS8050-H-TP SOT23 Package 1.5A Collector Current

Key Attributes
Model Number: MMSS8050-H-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMSS8050-H-TP
Package:
SOT-23
Product Description

Product Overview

The MMSS8050-L is an NPN Silicon Plastic-Encapsulate Transistor in a SOT-23 package. It is designed for applications with a power dissipation capability of 0.3 Watts at 25C ambient temperature, a collector current of 1.5A, and a collector-base voltage of 40V. This transistor offers a wide operating and storage junction temperature range from -55C to +150C.

Product Attributes

  • Brand: Micro Commercial Components (MCC)
  • Package: SOT-23
  • Material: Molded Plastic
  • Case Material: Molded Plastic
  • UL Flammability Classification: 94V-0
  • MSL Rating: 1
  • Halogen Free Option: Available upon request by adding suffix "-HF"

Technical Specifications

ParameterSymbolMinMaxUnitsConditions
Collector-Base Breakdown VoltageV(BR)CBO40---VdcIC=100Adc, IE=0
Collector-Emitter Breakdown VoltageV(BR)CEO25---VdcIC=0.1mAdc, IB=0
Emitter-Base Breakdown VoltageV(BR)EBO5.0---VdcIE=100Adc, IC=0
Collector Cutoff CurrentICBO---0.1AdcVCB=40Vdc, IE=0
Collector Cutoff CurrentICEO---0.1AdcVCE=20Vdc, IB=0
Emitter Cutoff CurrentIEBO---0.1AdcVEB=5.0Vdc, IC=0
DC Current GainhFE(1)120350---IC=100mAdc, VCE=1.0Vdc
DC Current GainhFE(2)40------IC=800mAdc, VCE=1.0Vdc
Collector-Emitter Saturation VoltageVCE(sat)---0.5VdcIC=800mAdc, IB=80mAdc
Base-Emitter Saturation VoltageVBE(sat)---1.2VdcIC=800mAdc, IB=80mAdc
Base-Emitter VoltageVEB---1.6VdcIE=1.5Adc
Transistor FrequencyfT100---MHzIC=50mAdc, VCE=10Vdc, f=30MHz
Power DissipationPd---0.3WattsTamb=25C
Collector CurrentIC---1.5A---
Collector-Base VoltageVCB---40V---
Operating and Storage Junction TemperatureTJ, TSTG-55+150C---

2409302134_MCC-MMSS8050-H-TP_C90158.pdf

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