PNP Transistor MCC 2SB1188-Q-TP with Maximum Collector Current 2 Amps and UL 94 V0 Flammability Rating

Key Attributes
Model Number: 2SB1188-Q-TP
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
500mW
Type:
PNP
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
32V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SB1188-Q-TP
Package:
SOT-89
Product Description

Product Overview

The 2SB1188 series are PNP plastic encapsulated transistors designed for various applications. They feature a Halogen Free. "Green" Device status, Moisture Sensitivity Level 1, and meet UL 94 V-0 flammability rating. These RoHS compliant transistors offer reliable performance with specified maximum ratings and electrical characteristics.

Product Attributes

  • Brand: MCCSEMI
  • Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating
  • Features: Halogen Free. Green Device, Moisture Sensitivity Level 1

Technical Specifications

ParameterSymbol2SB1188-P/2SB1188-Q/2SB1188-R Min2SB1188-P/2SB1188-Q/2SB1188-R Typ2SB1188-P/2SB1188-Q/2SB1188-R MaxUnitConditions
Collector Power DissipationPC500mWMax
Maxmium Collector CurrentICM-2.0A
Collector-Emitter VoltageVCEO-32V
Emitter-Base VoltageVEBO-5.0V
Collector-Base VoltageVCBO-40V
Thermal Resistance250/WJunction to Ambient
Collector-Base Cutoff CurrentICBO-1.0AVCB=-20V, IE=0
Emitter-Base Cutoff CurrentIEBO-1.0AVEB=-4.0V, IC=0
Emitter-Base Breakdown VoltageV(BR)EBO-5.0VIC=-50A, IE=0
Collector-Emitter Breakdown VoltageV(BR)CEO-32VIC=-50A, IE=0
Collector-Base Breakdown VoltageV(BR)CBO-40VIC=-1mA, IB=0
Collector Output CapacitanceCob65pFVCB=-10V, IE=0, f=1.0MHz
Transition FrequencyfT80MHzVCE=-5.0V, IC=-0.5A, f=30MHz
Collector-Emitter Saturation VoltageVCE(sat)-0.8VIC=-2A, IB=-0.2A (Note2)
DC Current GainhFE82390VCE=-3.0V, IC=-0.5A (Note2)

2409302332_MCC-2SB1188-Q-TP_C7463937.pdf

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