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quality N Channel MOSFET MCC BSS138AKDW TP Featuring Dissipation and RoHS Compliance for Electronic Circuits factory
quality N Channel MOSFET MCC BSS138AKDW TP Featuring Dissipation and RoHS Compliance for Electronic Circuits factory

N Channel MOSFET MCC BSS138AKDW TP Featuring Dissipation and RoHS Compliance for Electronic Circuits

Key Attributes
Model Number: BSS138AKDW-TP
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.9Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
1.45V
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
2 N-Channel
Input Capacitance(Ciss):
22.8nF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
BSS138AKDW-TP
Package:
SOT-363
Product Description

Product Overview

This high-density N-Channel MOSFET features an extremely low RDS(ON) and is ESD protected up to 1500V. Designed for reliability, it meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free. The device is RoHS compliant, ensuring environmental responsibility. Its robust design makes it suitable for various electronic applications requiring efficient switching and low power dissipation.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Device Type: N-Channel MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Environmental Compliance: Halogen Free, RoHS Compliant
  • Packaging: Tape & Reel (3Kpcs/Reel)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 0.22 A
Power Dissipation PD 0.35 W
Operating Junction Temperature Range -55 +150 °C
Storage Temperature -55 +150 °C
Thermal Resistance (Junction to Ambient) RθJA 357 °C/W
Electrical Characteristics (Ta=25°C unless otherwise specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 50 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 0.8 1.45 V
Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V ±10 µA
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V 1.0 µA
Drain-Source On-Resistance RDS(on) VGS=10V, ID=0.5A 1.9 2.4 Ω
Diode Forward Voltage VSD VGS=0V, IS=0.5A 1.0 1.3 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 22.8 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1MHz 3.5 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz 2.9 pF
Turn-On Delay Time td(on) VDD=30V, VGEN=10V, RG=25Ω, ID=0.5A, RL=60Ω 0.5 ns
Turn-Off Delay Time td(off) VDD=30V, VGEN=10V, RG=25Ω, ID=0.5A, RL=60Ω 1.0 ns
Forward Transconductance gFS VDS=10V, ID=0.2A 100 mS
Dimensions (Unit: mm)
A MIN 0.006 TYP 0.014 INCHES
A MIN 0.15 TYP 0.35 MM
B MIN 0.045 TYP 0.053 INCHES
B MIN 1.15 TYP 1.35 MM
C MIN 0.079 TYP 0.096 INCHES
C MIN 2.00 TYP 2.45 MM
D MIN 0.047 TYP 0.055 INCHES
D MIN 1.20 TYP 1.40 MM
G MIN 0.071 TYP 0.087 INCHES
G MIN 1.80 TYP 2.20 MM
J MIN ----- TYP 0.004 INCHES
J MIN ----- TYP 0.10 MM
K MIN 0.031 TYP 0.043 INCHES
K MIN 0.80 TYP 1.10 MM
L MIN 0.010 TYP 0.018 INCHES
L MIN 0.26 TYP 0.46 MM
M MIN 0.003 TYP 0.006 INCHES
M MIN 0.08 TYP 0.15 MM
0.026 0.65 TYP.

Note: Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%.

Note 1: Halogen free Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Note 2: Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%.


2410122023_MCC-BSS138AKDW-TP_C779245.pdf
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