PNP transistor MDD Microdiode Semiconductor B772 in SOT89 3L package for general electronic circuits
Key Attributes
Model Number:
B772
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
50MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
B772
Package:
SOT-89-3L
Product Description
Product Overview
The B772 is a PNP transistor in a SOT-89-3L package, designed for general-purpose applications. It offers power dissipation capabilities and is suitable for various electronic circuits.
Product Attributes
- Brand: Microdiode (implied by URL)
- Package: SOT-89-3L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -30 | V | |||
| Emitter-Base Voltage | VEBO | -6 | V | |||
| Collector Current-Continuous | IC | -3 | A | |||
| Collector Power Dissipation | PC | Ta=25 | 0.5 | W | ||
| Thermal Resistance From Junction To Ambient | RJA | 250 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA,IB=0 | -30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A,IC=0 | -6 | V | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -1 | A | ||
| Emitter cut-off current | IEBO | VEB=-6V, IC=0 | -1 | A | ||
| Collector cut-off current | ICEO | VCE=-30V, IB=0 | -10 | A | ||
| DC current gain | hFE(1) | VCE=-2V, IB=-0.2A | 30 | 400 | ||
| DC current gain | hFE(2) | VCE=-2V, IC=-1A | 60 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-2A, IB=-0.2A | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-2A, IB=-0.2A | -1.5 | V | ||
| Transition frequency | fT | VCE=-5V, IC=-0.1A | 50 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0 , f=1MHz | 55 | pF | ||
| hFE RANK CLASSIFICATION | ||||||
| Rank | Range | Min | Typ | Max | Unit | |
| GR | 60-120 | 60 | 120 | |||
| RO | 100-200 | 100 | 200 | |||
| Y | 160-320 | 160 | 320 | |||
| 220 | 200-400 | 200 | 400 | |||
2408090958_MDD-Microdiode-Semiconductor-B772_C414035.pdf
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