Compact surface mount MCC SI3404HE3 TP MOSFET with UL 94 V 0 flammability rating and RoHS compliance
Key Attributes
Model Number:
SI3404HE3-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.6A
RDS(on):
28mΩ@10V;42mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Pd - Power Dissipation:
1.2W
Output Capacitance(Coss):
118pF
Input Capacitance(Ciss):
820pF
Mfr. Part #:
SI3404HE3-TP
Package:
SOT-23
Product Description
Product Overview
The SI3404HE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a high-density cell design for extremely low RDS(on), ensuring efficient power handling. This AEC-Q101 qualified device is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability rating, making it a sustainable and reliable choice for various industrial and automotive uses. Its moisture sensitivity level is 1, and it is suitable for surface mounting on FR4 boards.
Product Attributes
- Brand: MCC (Micro Commercial Components)
- Model: SI3404HE3
- Package Type: SOT-23
- Certifications: AEC-Q101 Qualified, UL 94 V-0 Flammability Rating
- Environmental Compliance: Halogen Free, "Green" Device, Lead Free Finish/RoHS Compliant
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Continuous Drain Current | ID | 5.6 | A | |||
| Pulsed Drain Current (Note 3) | IDM | 30 | A | |||
| Total Power Dissipation | PD | 1.2 | W | |||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Junction to Ambient Thermal Resistance (Note 2) | RthJA | Surface Mounted on FR4 Board, t<5 sec. | 104 | C/W | ||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 3 | V | |
| Drain-Source On-Resistance (Note 4) | RDS(on) | VGS=10V, ID=5.8A | 28 | m | ||
| Drain-Source On-Resistance (Note 4) | RDS(on) | VGS=4.5V, ID=4.8A | 42 | m | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | 1 | V | ||
| Dynamic Characteristics (Note 5) | ||||||
| Forward Tranconductance (Note 4) | gFS | VDS=5V, ID=5.8A | 5 | S | ||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 820 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | 118 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | 85 | pF | ||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 1.5 | |||
| Switching Characteristics (Note 5) | ||||||
| Turn-On Delay Time | td(on) | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 6.5 | ns | ||
| Turn-On Rise Time | tr | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 3.1 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 15.1 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V,VDS=15V, RL=2.6,RGEN=3 | 2.7 | ns | ||
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SI3404HE3 | Tape&Reel: 3Kpcs/Reel | SI3404HE3-TP |
2410010132_MCC-SI3404HE3-TP_C7463920.pdf
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