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quality N Channel MOSFET with Low RDS on MCC SI3134KL3 TP UL 94 V0 Flammability Rating and RoHS Compliance factory
quality N Channel MOSFET with Low RDS on MCC SI3134KL3 TP UL 94 V0 Flammability Rating and RoHS Compliance factory

N Channel MOSFET with Low RDS on MCC SI3134KL3 TP UL 94 V0 Flammability Rating and RoHS Compliance

Key Attributes
Model Number: SI3134KL3-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
15pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
120pF@16V
Pd - Power Dissipation:
100mW
Gate Charge(Qg):
-
Mfr. Part #:
SI3134KL3-TP
Package:
DFN-3L(1x0.6)
Product Description

Product Overview

The SI3134KL3 is an N-Channel MOSFET designed for low logic level gate drive applications. It features a low RDS(on) as an N-Channel switch and meets UL 94 V-0 flammability rating. This component is Moisture Sensitivity Level 1 and is Halogen Free available upon request. It is lead-free and RoHS compliant. The device operates within a junction temperature range of -55C to +150C.

Product Attributes

  • Brand: MCC SEMI
  • Model: SI3134KL3
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliant: Yes
  • Halogen Free: Available upon request (by adding "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 20 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.35 0.75 1.1 V
Gate-body Leakage Current IDSS VGS = 10V, VDS =0V 20 A
Zero Gate Voltage Drain Current IGSS VDS =20V, VGS =0V 1.0 A
Drain-Source On-Resistance RDS(on) VGS=2.5V, ID=150mA 0.7
Drain-Source On-Resistance RDS(on) VGS=1.8V, ID=150mA 0.9
Drain-Source On-Resistance RDS(on) VDS=10V, ID=150mA 150 VDS=10V,VGS=4.5V,ID=500 mA, RGEN=10
Input Capacitance Ciss VDS=10V,VGS=4.5V,ID=500 mA, RGEN=10 79 pF
Output Capacitance Coss VDS=10V,VGS=4.5V,ID=500 mA, RGEN=10 13 pF
Reverse Transfer Capacitance Crss VDS=10V,VGS=4.5V,ID=500 mA, RGEN=10 9 pF
Turn-on Delay Time td(on) VDS=16V,VGS=0V, f=1MHz 6.7 ns
Turn-off Delay Time td(off) VDS=16V,VGS=0V, f=1MHz 17.3 ns
Diode Forward Voltage VSD VGS=0V, IS=150mA 1.2 V
Rise Time tr VGS=4.5V, ID=150mA 4.8 ns
Fall Time tf VGS=4.5V, ID=150mA 7.4 ns
Maximum Ratings: Operating Junction Temperature -55 +150 C
Maximum Ratings: Storage Temperature -55 +150 C
Maximum Ratings: Thermal Resistance (Junction to Ambient) RthJA 1250 C/W
Maximum Ratings: Drain Current-Continuous ID (1) 0.75 A
Maximum Ratings: Pulsed Drain Current IDM 1.8 A
Maximum Ratings: Drain-Source Voltage VDS 20 V
Maximum Ratings: Gate-Source Voltage VGS 12 V
Maximum Ratings: Power Dissipation PD (2) 0.1 W

Dimensions (mm):

DIM INCHES MM
A 0.018 - 0.022 0.45 - 0.55
A1 0.000 - 0.002 0.00 - 0.05
b 0.018 - 0.022 0.45 - 0.55
b1 0.004 - 0.008 0.10 - 0.20
c 0.005 - 0.007 0.12 - 0.18
D 0.037 - 0.042 0.95 - 1.075
E 0.022 - 0.026 0.55 - 0.675
E1 0.006 - 0.010 0.15 - 0.25
e 0.008 - 0.012 0.20 - 0.30
L 0.0002 - 0.05 0.005 - 1.27
L1 0.026 0.65

Suggested Solder Pad Layout (TYP.): 0.65 (mm)

Ordering Information:

  • Device: SI3134KL3
  • Packing: Part Number-TP (Tape&Reel: 10Kpcs/Reel)
  • Halogen Free: Add "-HF" suffix (e.g., Part Number-TP-HF)

2008121536_MCC-SI3134KL3-TP_C721377.pdf

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