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quality Ultrafast soft recovery diode MICROCHIP APT30D120BG ideal choice for inverters and motor controllers factory
quality Ultrafast soft recovery diode MICROCHIP APT30D120BG ideal choice for inverters and motor controllers factory

Ultrafast soft recovery diode MICROCHIP APT30D120BG ideal choice for inverters and motor controllers

Key Attributes
Model Number: APT30D120BG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
210A
Reverse Leakage Current (Ir):
250uA@1200V
Reverse Recovery Time (trr):
370ns
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
2.5V@30A
Current - Rectified:
30A
Mfr. Part #:
APT30D120BG
Package:
TO-247
Product Description

Product Overview

The APT30D120BG is an ultrafast soft recovery rectifier diode designed for various power electronics applications. It features fast recovery times, soft recovery characteristics, low forward voltage, and low leakage, making it ideal for power factor correction, switchmode power supplies, inverters, and motor controllers. Its benefits include reduced switching losses, lower EMI noise, cooler operation, and increased system reliability and power density.

Product Attributes

  • Brand: Microsemi
  • Certifications: RoHS compliant

Technical Specifications

ParameterValueUnitConditions
Maximum DC reverse voltage1200V
Maximum peak repetitive reverse voltage1200V
Maximum working peak reverse voltage1200V
Maximum average forward current30ATC = 128 C, duty cycle = 0.5
RMS forward current59A
Non-repetitive forward surge current210ATJ = 45 C, 8.3 ms
Operating and storage temperature range55 to 175C
Lead temperature for 10 s300C
Forward voltage2.0VIF = 30 A
Forward voltage2.3VIF = 60 A
Forward voltage1.8VIF = 30 A, TJ = 125 C
Maximum reverse leakage current250AVR = VR rated
Maximum reverse leakage current500AVR = VR rated, TJ = 125 C
Junction capacitance32pFVR = 200 V
Reverse recovery time31nsIF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C
Reverse recovery time370nsIF = 30 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C
Reverse recovery charge660nCIF = 30 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C
Maximum reverse recovery current5AIF = 30 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C
Reverse recovery time500nsIF = 30 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C
Reverse recovery charge3450nCIF = 30 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C
Maximum reverse recovery current12AIF = 30 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C
Reverse recovery time220nsIF = 30 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C
Reverse recovery charge4650nCIF = 30 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C
Maximum reverse recovery current37AIF = 30 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C
Junction-to-case thermal resistance0.61C/W
Junction-to-ambient thermal resistance40C/W
Package weight5.9g
Maximum mounting torque1.1Nm

2504101957_MICROCHIP-APT30D120BG_C17290218.pdf

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