1200 Volt Silicon Carbide N Channel Power MOSFET Microchip MSC025SMA120B4 with Fast Switching Speeds
Key Attributes
Model Number:
MSC025SMA120B4
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
103A
Operating Temperature -:
-55℃~+175℃
RDS(on):
31mΩ
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Input Capacitance(Ciss):
3.02nF
Output Capacitance(Coss):
-
Pd - Power Dissipation:
500W
Gate Charge(Qg):
232nC
Mfr. Part #:
MSC025SMA120B4
Package:
TO-247-4
Product Description
Microsemi MSC025SMA120B Silicon Carbide N-Channel Power MOSFET
The Microsemi MSC025SMA120B is a 1200 V, 25 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications. Its key features include low capacitances, fast switching speeds, stable operation at high junction temperatures, and a superior avalanche ruggedness. These advantages enable higher efficiency, lighter and more compact systems, and eliminate the need for external freewheeling diodes, leading to lower system costs. The device is suitable for PV inverters, industrial motor drives, smart grid applications, H/EV powertrains, EV chargers, and power supplies.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Ratings/Conditions | Unit |
|---|---|---|
| Absolute Maximum Ratings | ||
| Drain source voltage (VDSS) | 1200 | V |
| Continuous drain current at TC = 25 C (ID) | 103 | A |
| Continuous drain current at TC = 100 C (ID) | 73 | A |
| Pulsed drain current (IDM) | 275 | A |
| Gate-source voltage (VGS) | +23 to 10 | V |
| Total power dissipation at TC = 25 C (PD) | 500 | W |
| Linear derating factor | 3.33 | W/C |
| Thermal and Mechanical Characteristics | ||
| Junction-to-case thermal resistance (RJC) | 0.20 - 0.30 | C/W |
| Operating junction temperature (TJ) | -55 to 175 | C |
| Storage temperature (TSTG) | -55 to 150 | C |
| Soldering temperature for 10 seconds (TL) | 260 | C |
| Mounting torque, 6-32 or M3 screw | 1.1 | N-m |
| Package weight | 6.2 | g |
| Static Characteristics (TJ = 25 C unless otherwise specified) | ||
| Drain-source breakdown voltage (V(BR)DSS) (VGS = 0 V, ID = 100 A) | 1200 | V |
| Drain-source on resistance (RDS(on)) (VGS = 20 V, ID = 40 A) | 25 - 31 | m |
| Gate-source threshold voltage (VGS(th)) (VDS = VGS, ID = 3 mA) | 1.8 - 2.8 | V |
| Threshold voltage coefficient (VGS(th)/TJ) (VDS = VGS, ID = 3 mA) | -3.5 | mV/C |
| Zero gate voltage drain current (IDSS) (VDS = 1200 V, VGS = 0 V) | 100 | A |
| Zero gate voltage drain current (IDSS) (VDS = 1200 V, VGS = 0 V, TJ = 125 C) | 500 | A |
| Gate-source leakage current (IGSS) (VGS = 20 V / -10 V) | 100 | nA |
| Dynamic Characteristics (TJ = 25 C unless otherwise specified) | ||
| Input capacitance (Ciss) (VGS = 0 V, VDS = 1000 V, VAC = 25 mV, = 1 MHz) | 3020 | pF |
| Reverse transfer capacitance (Crss) | 25 | |
| Output capacitance (Coss) | 270 | |
| Total gate charge (Qg) (VGS = -5 V/20 V, VDD = 800 V, ID = 40 A) | 232 | nC |
| Gate-source charge (Qgs) | 41 | |
| Gate-drain charge (Qgd) | 50 | |
| Turn-on delay time (td(on)) (VDD = 800 V, VGS = -5 V/20 V, ID = 40 A, RG(ext) = 2.5 ) | 21 | ns |
| Current rise time (tr) | 14 | |
| Turn-off delay time (td(off)) | 45 | |
| Current fall time (tf) | 18 | |
| Turn-on switching energy (Eon) | 850 | J |
| Turn-off switching energy (Eoff) | 100 | |
| Turn-on delay time (td(on)) (VDD = 800 V, VGS = -5 V/20 V, ID = 40 A, RG(ext) = 2.5 ) | 18 | ns |
| Current rise time (tr) | 12 | |
| Turn-off delay time (td(off)) | 45 | |
| Current fall time (tf) | 14 | |
| Turn-on switching energy (Eon) | 730 | J |
| Turn-off switching energy (Eoff) | 100 | |
| Equivalent series resistance (ESR) ( = 1 MHz, 25 mV, drain short) | 0.88 | |
| Short circuit withstand time (SCWT) (VDS = 960 V, VGS = 20 V) | 3 | s |
| Avalanche energy, single pulse (EAS) (VDS = 150 V, VGS = 20 V, ID = 40 A) | 3500 | mJ |
| Body Diode Characteristics (TJ = 25 C unless otherwise specified) | ||
| Diode forward voltage (VSD) (ISD = 40 A, VGS = 0 V) | 4.0 | V |
| Diode forward voltage (VSD) (ISD = 40 A, VGS = -5 V) | 4.2 | V |
| Reverse recovery time (trr) (ISD = 40 A, VGS = -5 V, VDD = 800 V, dI/dt = -1000 A/s) | 90 | ns |
| Reverse recovery charge (Qrr) | 550 | nC |
| Reverse recovery current (IRRM) | 13.5 | A |
2411272158_MICROCHIP-MSC025SMA120B4_C3290749.pdf
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