MICROCHIP VP0808L G P Channel Vertical DMOS FET Featuring Ease of Paralleling and Drive Capabilities
Key Attributes
Model Number:
VP0808L-G
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
1.1A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
5Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
150pF@25V
Pd - Power Dissipation:
1W
Mfr. Part #:
VP0808L-G
Package:
TO-92
Product Description
Product Overview
The VP0808 is a P-Channel Enhancement-Mode Vertical DMOS FET from Supertex Inc. It is designed for applications requiring low power drive, ease of paralleling, low CISS, fast switching speeds, and excellent thermal stability. This device features an integral source-drain diode, high input impedance, and high gain, making it suitable for motor controls, converters, amplifiers, switches, power supply circuits, and various driver applications.
Product Attributes
- Brand: Supertex inc.
- Packaging: "Green" Packaging (Pb-free / RoHS compliant)
- Certifications: RoHS compliant
Technical Specifications
| Part Number | BVDSS/BVDGS | RDS(ON) (max) | ID(ON) (min) | Package | ja | Ordering Information |
| VP0808L-G | -80V | 5.0 | -1.1A | TO-92 | 132C/W | VP0808L-G (1000/Bag) |
| VP0808L-G P002 | -80V | 5.0 | -1.1A | TO-92 | 132C/W | VP0808L-G P002 (2000/Reel) |
| VP0808L-G P003 | -80V | 5.0 | -1.1A | TO-92 | 132C/W | VP0808L-G P003 |
| VP0808L-G P005 | -80V | 5.0 | -1.1A | TO-92 | 132C/W | VP0808L-G P005 |
| VP0808L-G P013 | -80V | 5.0 | -1.1A | TO-92 | 132C/W | VP0808L-G P013 |
| VP0808L-G P014 | -80V | 5.0 | -1.1A | TO-92 | 132C/W | VP0808L-G P014 |
| Parameter | Min | Typ | Max | Units | Conditions |
| BVDSS | -80 | - | - | V | VGS = 0V, ID = -10A |
| VGS(th) | -1.0 | - | -4.5 | V | VGS = VDS, ID = -1.0mA |
| IGSS | - | - | -100 | nA | VGS = 20V, VDS = 0V |
| IDSS | - | - | -10 | A | VGS = 0V, VDS = Max Rating |
| ID(ON) | -1.1 | - | - | A | VGS = -10V, VDS = -15V |
| RDS(ON) | - | - | 5.0 | VGS = -10V, ID = -1.0A | |
| GFS | 200 | - | - | mmho | VDS = -10V, ID = -500mA |
| CISS | - | - | 150 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz |
| COSS | - | - | 60 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz |
| CRSS | - | - | 25 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz |
| td(ON) | - | - | 15 | ns | VDD = -25V, ID = -500mA, RGEN = 25 |
| tr | - | - | 40 | ns | VDD = -25V, ID = -500mA, RGEN = 25 |
| td(OFF) | - | - | 30 | ns | VDD = -25V, ID = -500mA, RGEN = 25 |
| tf | - | - | 30 | ns | VDD = -25V, ID = -500mA, RGEN = 25 |
| VSD | - | -1.2 | - | V | VGS = 0V, ISD = -900mA |
2410121719_MICROCHIP-VP0808L-G_C632609.pdf
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