High Gain Amplification Transistor Minos TIP122 NPN Silicon Darlington with Integrated Damping Diode
Key Attributes
Model Number:
TIP122
Product Custom Attributes
Current - Collector Cutoff:
200uA
Pd - Power Dissipation:
2W
DC Current Gain:
1000
Type:
NPN
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
TIP122
Package:
TO-220
Product Description
Product Overview
This NPN Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring high amplification factors.
Product Attributes
- Brand: Shenzhen Minos ()
- Type: NPN Silicon Transistor
- Construction: Darlington
- Integrated Component: Damping Diode
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Storage Temperature | Tstg | -65 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Power Dissipation (Tc=25) | PC | 65 | W | ||||
| Collector Power Dissipation (TA=25) | PC | 2 | W | ||||
| Collector-Base Voltage | VCBO | 100 | V | ||||
| Collector-Emitter Voltage | VCEO | 100 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current | IC | 5 | A | ||||
| Collector Current (Pulse) | ICP | 8 | A | ||||
| Base Current | IB | 120 | mA | ||||
| Electrical Characteristics (Ta=25) | |||||||
| Collector-Base Breakdown Voltage | BVCBO | 100 | V | IC=1mA, IE=0 | |||
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | V | IC=5mA, IB=0 | |||
| Collector-Emitter Cutoff Current | ICEO | 0.5 | mA | VCE=50V, IB=0 | |||
| Collector-Base Cutoff Current | ICBO | 0.2 | mA | VCB=100V, IE=0 | |||
| Emitter-Base Cutoff Current | IEBO | 2.0 | mA | VEB=5V, IC=0 | |||
| DC Current Gain | HFE | 1000 | VCE=3V, IC=0.5A | ||||
| Collector-Emitter Saturation Voltage | VCE(sat1) | 2.0 | V | IC=3A, IB=12mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat2) | 4.0 | V | IC=5A, IB=20mA | |||
| Base-Emitter On Voltage | VBE(on) | 2.5 | V | VCE=3V, IC=3A | |||
| Common Base Output Capacitance | Cob | 200 | pF | VCB=10V, IE=0, f=0.1MHz | |||
Package Information
Package Type: TO-220
Pin Configuration
- 1: Base (B)
- 2: Collector (C)
- 3: Emitter (E)
2412061751_Minos-TIP122_C6719389.pdf
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