military grade rectifier diode MICROCHIP 1N5806US designed for ultrafast recovery and high reliability applications
Product Overview
This series of military-qualified "Ultrafast Recovery" rectifier diodes is designed for high-reliability applications where failure is not an option. Rated at 2.5 amps with working peak reverse voltages from 50 to 150 volts, these rectifiers feature hermetically sealed, voidless glass construction with an internal "Category 1" metallurgical bond. Available in both surface mount MELF and leaded package configurations, they are ideal for switching power supplies and other applications demanding extremely fast switching and low forward loss. These devices are inherently radiation-hardened.
Product Attributes
- Brand: Microsemi Corporation
- Certifications: Qualified per MIL-PRF-19500/477 (JAN, JANTX, JANTXV, JANS levels)
- Construction: Voidless hermetically sealed glass package, Quadruple-layer passivation, Internal "Category 1" metallurgical bonds
- Compliance: RoHS compliant versions available (commercial grade only)
- Origin: USA (MSC Lawrence, MA), Ireland (MSC Ireland)
Technical Specifications
| Model | Working Peak Reverse Voltage (VRWM) | Forward Surge Current (IFSM) | Average Rectified Output Current @ TEC = +75C (IO1) | Reverse Recovery Time (trr) | Capacitance @ VR = 10 V, f = 1 MHz (C) | Junction and Storage Temperature (TJ and TSTG) | Thermal Resistance Junction-to-End Cap (RJEC) |
| 1N5802US & URS | 50 V | 35 A | 2.5 A | 25 ns | 25 pF | -65 to +175 C | 13 C/W |
| 1N5804US & URS | 100 V | 35 A | 2.5 A | 25 ns | 25 pF | -65 to +175 C | 13 C/W |
| 1N5806US & URS | 150 V | 35 A | 2.5 A | 25 ns | 25 pF | -65 to +175 C | 13 C/W |
2410311240_MICROCHIP-1N5806US_C5444764.pdf
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