Power Conditioning Diode Minos RHRG75120-MNS Ultrafast Soft Recovery with High Operating Temperature
Key Attributes
Model Number:
RHRG75120-MNS
Product Custom Attributes
Reverse Leakage Current (Ir):
60uA@1200V
Non-Repetitive Peak Forward Surge Current:
520A
Reverse Recovery Time (trr):
100ns
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
2.8V@75A
Current - Rectified:
75A
Mfr. Part #:
RHRG75120-MNS
Package:
TO-247-2
Product Description
Product Overview
The FRED Ultrafast Soft Recovery Diode is designed for high-frequency power conditioning systems, offering reduced losses and EMI/RFI. Its soft recovery characteristic provides buffering in various applications, making it suitable for power converters and systems where switching losses are not the primary concern. This diode boasts ultrafast recovery, a high operating junction temperature, and excellent surge capacity.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos (Shenzhen Minos Technology Co., Ltd.)
Technical Specifications
| Parameter | Symbol | Test Conditions | Values | Units |
| Absolute Maximum Ratings | VRRM | 1200 | V | |
| IF(AV) | TA=110 | 75 | A | |
| IFSM | TA=25 | 520 | A | |
| IFRM | Square wave, 20kHZ | 150 | A | |
| Tj | 175 | |||
| Tstg | -55 to +175 | |||
| Electrical Characteristics | VBR | VR, IR=100A | 1200 | V |
| VF | IF=75 A | 2.00 - 2.80 | V | |
| VF | IF=75 A, Tj =125 | 1.75 - 2.60 | V | |
| IR | VR= VRRM | 60 | A | |
| IR | Tj=150, VR=1200V | 600 | A | |
| Reverse Recovery Time | trr | IF=0.5A, IR=1A, IRR=0.25A | 100 | ns |
| trr | IF=1A,VR=30V, di/dt =200A/us | 45 - 55 | ns | |
| Thermal Characteristics | RthJC | 0.70 | /W |
2506121200_Minos-RHRG75120-MNS_C49108779.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
