85V N Channel Power MOSFET Minos MPT045N08S with low RDS on and enhanced avalanche energy capability
Key Attributes
Model Number:
MPT045N08S
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
138A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.4mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
17pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
4.021nF@40V
Pd - Power Dissipation:
173.6W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MPT045N08S
Package:
TO-263
Product Description
Product Overview
The MPT045N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy, making it ideal for demanding applications such as motor drivers and high-speed switching.
Product Attributes
- Brand: MNS-KX
- Certifications: RoHS
Technical Specifications
| Ordering Code | Package | VDS (V) | RDS(on) @ VGS=10V (m) | ID @ TC=25C (A) | EAS (mJ) | PD (W) |
| MPT045N08-P | TO-220 | 85 | < 5 (Typ: 4.4) | 138 | 156 | 173.6 |
| MPT045N08-S | TO-263 | 85 | < 5 (Typ: 4.4) | 138 | 156 | 173.6 |
2410122024_Minos-MPT045N08S_C5352775.pdf
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