N Channel Power MOSFET Minos MPF12N65 Featuring Low Gate Charge and Excellent RDS ON Characteristics
Key Attributes
Model Number:
MPF12N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
580mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18.5pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
175pF
Input Capacitance(Ciss):
1.54nF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
MPF12N65
Package:
TO-220F
Product Description
Product Overview
The MPF12N65 is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications, including power switching, hard switched, and high-frequency circuits, as well as Uninterruptible Power Supplies.
Product Attributes
- Brand: MNS
- Origin: Shenzhen, China
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source Breakdown Voltage | BVDSS | VGS=0V,ID=250A | 650 | V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/ Tj | ID=250A,Referenced to 25 | 0.65 | V/ | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS,ID=250A | 3.0 | 4.0 | V | |
| Drain-source Leakage Current | IDSS | VDS=650V,VGS=0V,Tj=25 | 1 | A | ||
| VDS=520V,VGS=0V,Tj=125 | 100 | A | ||||
| Gate-body Leakage Current(VDS=0) | IGSS | VGS=30V | 100 | nA | ||
| Static Drain-source On Resistance | RDS(ON) | VGS=10V,ID=6.0A | 0.58 | 0.68 | ||
| Input Capacitance | Ciss | VGS=0V,VDS=25V,F=1.0MHZ | 1540 | pF | ||
| Output Capacitance | Coss | VGS=0V,VDS=25V,F=1.0MHZ | 175 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V,VDS=25V,F=1.0MHZ | 18.5 | pF | ||
| Turn-On Delay Time | Td(on) | VDD=325V,ID=12.0A RG=25 | 30 | ns | ||
| Turn-On Rise Time | Tr | VDD=325V,ID=12.0A RG=25 | 15 | ns | ||
| Turn-O Delay Time | Td(o) | VDD=325V,ID=12.0A RG=25 | 95 | ns | ||
| Turn-O Fall Time | Tf | VDD=325V,ID=12.0A RG=25 | 22 | ns | ||
| Total Gate Charge | Qg | ID=12.0A,VDS=520V VGS=10V | 44 | nC | ||
| Gate-to-Source Charge | Qgs | ID=12.0A,VDS=520V VGS=10V | 8.6 | nC | ||
| Gate-to-Drain Charge | Qg d | ID=12.0A,VDS=520V VGS=10V | 21 | nC | ||
| Continuous Diode Forward Current | Is | 12.0 | A | |||
| Diode Forward Voltage | VSD | Tj=25,Is=12.0A VGS=0V | 1.4 | V | ||
| Reverse Recovery Time | Trr | Tj=25,If=12.0A di/dt=100A/S | 380 | ns | ||
| Reverse Recovery Charge | Qrr | Tj=25,If=12.0A di/dt=100A/S | 4.5 | uC |
2410122013_Minos-MPF12N65_C5352768.pdf
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