High voltage PNP epitaxial transistor Minos 2SA1837 designed for power amplifier circuits and operation
Key Attributes
Model Number:
2SA1837
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
50W
Transition Frequency(fT):
40MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
230V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2SA1837
Package:
TO-220F
Product Description
Product Overview
The Minos Silicon PNP Epitaxial Type Power Amplifier is designed for high-performance amplification applications. It offers a complementary pairing with the 2SC4793 and boasts a high collector voltage of -230V (min). This component is suitable for various power amplifier circuits where reliability and robust voltage handling are critical. Continuous operation under heavy loads, including high temperature, current, or voltage, may significantly reduce product reliability, even if operating conditions remain within Absolute Maximum Ratings.
Product Attributes
- Brand: Minos Silicon
- Type: PNP Epitaxial Type Power Amplifier
- Complementary to: 2SC4793
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Rating | Unit | Test Condition | Min | Typ | Max | |
|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||||
| VCBO | Collector-base voltage | -230 | V | |||||
| VCEO | Collector-emitter voltage | -230 | V | |||||
| VEBO | Emitter-base voltage | -5 | V | |||||
| IC | Collector current | -1 | A | |||||
| IB | Base current | -0.2 | A | |||||
| PC | Collector power dissipation (Tc=25) | 50 | W | |||||
| Tj | Junction temperature | 150 | ||||||
| TSTG | Storage temperature range | -55~150 | ||||||
| Thermal Characteristics | ||||||||
| RJC | Junction-to-Case | /W | 3.0 | |||||
| Electrical Characteristics | ||||||||
| ICBO | Collector-Base Cut-off Current | uA | VCB=-230V,IE=0 | -1.0 | ||||
| IEBO | Emitter-Base Cut-off Current | uA | VEB=-5V,IC=0 | -1.0 | ||||
| VCEO | Collector-Emitter Breakdown Voltage | -230 | V | IC=-1mA | ||||
| hFE | DC current gain | IC=-0.1A; VCE=-5V | 100 | 300 | ||||
| VCEsat | Collector-emitter saturation voltage | V | IC=-0.5A; IB=-0.05A | -0.5 | ||||
| VBEsat | Base-Emitter Saturation Voltage | V | IC=-0.5A,IB=-0.05A | -1.4 | ||||
| VBE | Base-emitter voltage | V | VCE=-5V;IC=-0.5A | -1.5 | ||||
| fT | Transition frequency | MHz | VCE=-10V;IC=-100mA | 40 | ||||
| Symbol | Dimensionsmillimeters | Min | Max |
|---|---|---|---|
| A | 4.35 | 4.75 | |
| A1 | 2.30 | 2.70 | |
| A2 | 0.40 | 0.80 | |
| A3 | 2.10 | 2.50 | |
| b | 0.60 | 1.00 | |
| b1 | 1.00 | 1.40 | |
| c | 0.30 | 0.70 | |
| e | 2.30 | 2.70 | |
| E | 9.80 | 10.2 | |
| E1 | 6.30 | 6.70 | |
| H | 15.6 | 16.0 | |
| H1 | 8.80 | 9.20 | |
| H2 | 12.9 | 13.5 | |
| H3 | 3.10 | 3.50 | |
| G | 3.10 | 3.50 | |
| P | 3.10 | 3.50 |
2410122013_Minos-2SA1837_C2920867.pdf
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