High current N Channel MOSFET MIRACLE POWER MS0005L with 100V voltage 325A and low RDS on resistance
Key Attributes
Model Number:
MS0005L
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
325A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
268pF
Pd - Power Dissipation:
313W
Output Capacitance(Coss):
2.09nF
Input Capacitance(Ciss):
12.6nF
Gate Charge(Qg):
230nC@10V
Mfr. Part #:
MS0005L
Package:
TOLL-8L
Product Description
Product Overview
The MS0005L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology for superior performance. It features a high voltage rating of 100V and a continuous drain current of 325A at 25C, with a low on-resistance of 1.2m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for demanding applications such as power management in computing, CE, IE 4.0, and communications. It is also ideal for current switching in DC/DC & AC/DC (SR) sub-systems, load switching, quick/wireless charging, and motor driving. The device is halogen-free and RoHS compliant, with 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Compliance: Halogen free; RoHS compliant
- Testing: 100% EAS Guaranteed
- Package Type: TOLL-8L
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit | |||
|---|---|---|---|---|---|---|---|---|---|
| Features | |||||||||
| Voltage, Current, RDS(on) | 100V, 325A, 1.2m@VGS = 10V | ||||||||
| Key Characteristics | Excellent RDS(on) and Low Gate Charge | ||||||||
| Absolute Maximum Ratings | |||||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 100 | V | |||
| VGS | Gate-Source Voltage | - | - | 20 | V | ||||
| ID | Drain Current-Continuous | TC = 25C | - | - | 325 | A | |||
| ID | Drain Current-Continuous | TC = 100C | - | - | 205 | A | |||
| IDM | Drain Current-Pulsed | - | - | 1300 | A | ||||
| PD | Maximum Power Dissipation | TC = 25C | - | - | 313 | W | |||
| EAS | Single Pulsed Avalanche Energy | - | - | 2025 | mJ | ||||
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | C | ||||
| Thermal Characteristics | |||||||||
| RJC | Thermal Resistance, Junction to Case | - | 0.4 | - | C/W | ||||
| RJA | Thermal Resistance, Junction to Ambient | - | 40 | - | C/W | ||||
| Electrical Characteristics | |||||||||
| Off Characteristics | |||||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V | |||
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1.0 | A | |||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA | |||
| On Characteristics | |||||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V | |||
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 1.2 | 1.5 | m | |||
| Dynamic Characteristics | |||||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 2.4 | - | ||||
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 12600 | - | pF | |||
| Coss | Output Capacitance | - | 2090 | - | pF | ||||
| Crss | Reverse Transfer Capacitance | - | 268 | - | pF | ||||
| On Characteristics (Switching) | |||||||||
| td(on) | Turn-On Delay Time | VDS = 20V, VGS = 10V, RL = 1, RGEN = 3 | - | 40 | - | ns | |||
| tr | Turn-On Rise Time | - | 68 | - | ns | ||||
| td(off) | Turn-Off Delay Time | - | 130 | - | ns | ||||
| tf | Turn-Off Fall Time | - | 90 | - | ns | ||||
| Qg | Total Gate Charge | VDS = 20V, VGS = 0 to 10V, ID = 20A | - | 230 | - | nC | |||
| Qgs | Gate-Source Charge | - | 56 | - | nC | ||||
| Qgd | Gate-Drain Charge | - | 76 | - | nC | ||||
| Drain-Source Diode Characteristics | |||||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 325 | A | |||
| ISM | Maximum Pulsed Current | - | - | 1300 | A | ||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 15A | - | - | 1.2 | V | |||
| Trr | Body Diode Reverse Recovery Time | IF = 15A, dIF/dt = 100A/s | - | 115 | - | ns | |||
| Qrr | Body Diode Reverse Recovery Charge | IF = 15A, dIF/dt = 100A/s | - | 275 | - | nC | |||
| Package Information (TOLL-8L) | |||||||||
| Symbol | Dimension | Min. | Typ. | Max. | Symbol | Dimension | Min. | Typ. | Max. |
| A | 2.25 | 2.30 | 2.35 | E | 9.85 | 9.90 | 9.95 | ||
| A1 | 1.75 | 1.80 | 1.85 | E1 | 8.00 | 8.10 | 8.20 | ||
| b | 0.65 | 0.70 | 0.75 | E2 | 0.65 | 0.70 | 0.75 | ||
| b1 | 9.75 | 9.80 | 9.85 | H | 11.60 | 11.70 | 11.80 | ||
| b2 | 0.70 | 0.75 | 0.80 | H1 | 6.95 | BSC | - | ||
| b3 | 1.15 | 1.20 | 1.25 | H2 | 5.90 | BSC | - | ||
| c | 0.45 | 0.50 | 0.55 | K | 3.10 | REF | - | ||
| D | 10.35 | 10.40 | 10.45 | L | 1.55 | 1.65 | 1.75 | ||
| D1 | 11.00 | 11.10 | 11.20 | L1 | 0.65 | 0.70 | 0.75 | ||
| D2 | 3.25 | 3.30 | 3.35 | L2 | 0.50 | 0.60 | 0.70 | ||
| D4 | 4.50 | 4.55 | 4.60 | L3 | 0.40 | 0.50 | 0.60 | ||
| e | 1.20 | BSC | - | Q | 7.95 | REF | - | ||
| e1 | 1.225 | BSC | - | R | 3.00 | 3.10 | 3.20 | ||
2504151445_MIRACLE-POWER-MS0005L_C47361203.pdf
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