Durable molded plastic bridge rectifier MSKSEMI DB307S providing solution for printed circuit board power circuits
Key Attributes
Model Number:
DB307S
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
60A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@3A
Current - Rectified:
3A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
DB307S
Package:
DBS
Product Description
Product Overview
The DB301S-DB307S series are high-quality bridge rectifiers designed for printed circuit board applications. They offer reliable, low-cost construction using a molded plastic technique, ensuring high temperature soldering capability. These rectifiers are characterized by their small size, simple installation, and high surge current capability, making them ideal for various electronic power supply circuits.
Product Attributes
- Brand: MSKSEMI Semiconductor
- Construction: Molded plastic body
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Mounting Position: Any
- Weight: 0.02 ounce, 0.4 grams
Technical Specifications
| Parameter | SYMBOLS | DB301S | DB302S | DB303S | DB304S | DB305S | DB307S | UNITS | |
| Maximum repetitive peak reverse voltage | RRM | 50 | 100 | 200 | 400 | 600 | 1000 | V | |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 700 | V | |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward rectified current at TA=40C | IF(AV) | 3.0 | A | ||||||
| Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | IFSM | 85 | A | ||||||
| Maximum instantaneous forward voltage drop per leg at 3.0A | VF | 1.1 | V | ||||||
| Maximum DC reverse current at rated DC blocking voltage TA=25C | IR | 10 | µA | ||||||
| Maximum DC reverse current at rated DC blocking voltage TA=125C | IR | 500 | µA | ||||||
| I2t Rating for Fusing (t<8.3ms) | I2 t | 10.4 | A2 s | ||||||
| Typical Thermal Resistance (Note2) | RθJA | 110 | °C/W | ||||||
| Operating temperature range | J | -55 to +150 | °C | ||||||
| Storage temperature range | TSTG | -55 to +150 | °C | ||||||
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient mounted on P.C.B. with 0.5*0.5" (13*13 mm) copper pads.
2211010930_MSKSEMI-DB307S_C5240659.pdf
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