86--136 6733 2386
quality Power MOSFET MIRACLE POWER MS8003C with 80V Drain Source Voltage and 100 Percent EAS Guaranteed factory
quality Power MOSFET MIRACLE POWER MS8003C with 80V Drain Source Voltage and 100 Percent EAS Guaranteed factory

Power MOSFET MIRACLE POWER MS8003C with 80V Drain Source Voltage and 100 Percent EAS Guaranteed

Key Attributes
Model Number: MS8003C
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
313A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Input Capacitance(Ciss):
13.65nF
Pd - Power Dissipation:
312.5W
Gate Charge(Qg):
200nC
Mfr. Part #:
MS8003C
Package:
TO-220
Product Description

Product Overview

The MS8003C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features an 80V drain-source voltage and a continuous drain current of 313A at 25C, with a low on-resistance of 1.5m (typ.) at VGS = 10V. This MOSFET is designed for excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. It is RoHS-compliant and halogen-free, with 100% EAS guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: RoHS-compliant, Halogen-free
  • Testing: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 80 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 313 A
ID Drain Current-Continuous (TC = 100C) 198 A
IDM Drain Current-Pulsed 1250 A
PD Maximum Power Dissipation (TC = 25C) 312.5 W
EAS Single Pulsed Avalanche Energy 2592 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.4 C/W
RJA Thermal Resistance, Junction to Ambient 35 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 80 - - V
IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 1.5 1.9 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 3.2 -
Ciss Input Capacitance VDS = 40V, VGS = 0V, f = 1.0MHz - 13.65 - nF
Coss Output Capacitance - 4421 - pF
Crss Reverse Transfer Capacitance - 110 - pF
Switching Characteristics (On Characteristics)
td(on) Turn-On Delay Time VDD = 40V, VGS = 10V, ID = 20A, RGEN = 3.0 - 33 - ns
tr Turn-On Rise Time - 54 - ns
td(off) Turn-Off Delay Time - 138 - ns
tf Turn-Off Fall Time - 73 - ns
Qg Total Gate Charge VDS = 40V, VGS = 0 to 10V, ID = 20A - 200 - nC
Qgs Gate-Source Charge - 68 - nC
Qgd Gate-Drain Charge - 41 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 313 A
ISM Maximum Pulsed Current - - 1250 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - 0.7 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 115 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 331 - nC

2504151445_MIRACLE-POWER-MS8003C_C47361104.pdf

Related Products
quality High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers factory
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
quality Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
quality Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit factory
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.