High Current NH MBR20L200FCT Schottky Barrier Rectifier 200 Volt Suitable for Switch Mode Power Supplies
Key Attributes
Model Number:
MBR20L200FCT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
180A
Reverse Leakage Current (Ir):
5uA@200V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
920mV@10A
Current - Rectified:
20A
Mfr. Part #:
MBR20L200FCT
Package:
ITO-220FAB
Product Description
Niuhang MBR20L200FCT Schottky Barrier Rectifiers
The Niuhang MBR20L200FCT is a Schottky Barrier Rectifier designed for high-efficiency applications. It features NH's Plane Schottky Barrier Chip Technology, offering a low forward voltage drop and low power loss for high reliability. This device is ideal for switch mode power supplies, fast chargers, LED driver and monitor lighting, and automotive electronics.
Product Attributes
- Brand: Niuhang Electronic Specification Technology Co., Ltd
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Certifications: RoHS-Compliant, Pb-Free
- Case: Molded With UL-94 ClassV-0 Recognized
- Terminals: Tin Plated Leads, Solderable Per J-STD-002 And JESD22-B102
Technical Specifications
| Parameter | Test Conditions | Symbol | Ratings | Unit |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 200 | V | |
| Maximum RMS Voltage | VRMS | 140 | V | |
| Maximum DC Blocking Voltage | VDC | 200 | V | |
| Maximum Average Forward Rectified Current Per Diode | IF(AV) | 10 | A | |
| Maximum Average Forward Rectified Current Total device | IF(AV) | 20 | A | |
| Peak Forward Surge Current Per Diode | 8.3ms Single Half Sine-wave Superimposed On Rate Load | IFSM | 180 | A |
| Current Squared Time Per Diode | t< 8.3ms | I2t | 134.5 | A2sec |
| Maximum Mounting Torque | M3 screw | TMM | 1.1 | N.m |
| Instaneous Forward Voltage Per Diode | IF= 10.0 A, Ta=25 | VF | 0.87 | V |
| Instaneous Forward Voltage Per Diode | IF= 10.0 A, Ta=110 | VF | 0.83 | V |
| Maximum DC Reverse Current at Rated DC Blocking Voltage | Ta=25,VR=VRRM | IRRM | 1 | uA |
| Maximum DC Reverse Current at Rated DC Blocking Voltage | Ta=110,VR=VRRM*80% | IRRM | 20 | mA |
| Typical Junction Capacitance Per Diode | 4 V,1MHz | CJ | 140 | pF |
| Maximum Reverse Recovery Time | IF=0.5A, IR=1.0A, IRR=0.25A | Trr | -- | nS |
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Storage Temperature Range | TSTD | -55 to 150 | ||
| Thermal Resistance Junction To Ambient | Still Air Environment, With Steady-State, With Ta=25 | RJA | 65.5 | /W |
| Thermal Resistance Junction-Case | Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat., With Steady-State, With Ta=25 | RJC | 3.0 | /W |
2508201745_NH-MBR20L200FCT_C7428058.pdf
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