Matched Current Gain NPN NPN Double Transistors Nexperia PMP4201V 115 in Small SOT666 Plastic Package

Key Attributes
Model Number: PMP4201V,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMP4201V,115
Package:
SOT-666-6
Product Description

Product Overview

The PMP4201V, PMP4201G, and PMP4201Y are NPN/NPN matched double transistors designed for surface-mount applications. These devices feature matched current gain (hFE) and base-emitter voltage (VBE), making them ideal for current mirror and differential amplifier circuits. They are available in small SMD plastic packages (SOT666, SOT353, SOT363) with fully isolated internal transistors in SOT666 and SOT363 packages. The common emitter configuration is available for SOT353 types, and an application-optimized pinout is provided.

Product Attributes

  • Brand: NXP Semiconductors
  • Technology: NPN/NPN Matched Double Transistors
  • Package Types: SOT666, SOT353 (SC-88A), SOT363 (SC-88)
  • Internal Isolation: Fully isolated in SOT666 and SOT363 packages

Technical Specifications

Model Package NPN/NPN Complement hFE Matching (hFE1/hFE2) VBE Matching (VBE1-VBE2)
PMP4201V SOT666 0.95 0.98 (typ) 2 mV (max)
PMP4201G SOT353 (SC-88A) 0.95 0.98 (typ) 2 mV (max)
PMP4201Y SOT363 (SC-88) 0.95 0.98 (typ) 2 mV (max)
Symbol Parameter Conditions Min Typ Max Unit
Per Transistor Characteristics
VCEO Collector-emitter voltage Open base - - 45 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA 200 290 450 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 6 V
ICM Peak collector current Single pulse; tp 1 ms - - 200 mA
Ptot Total power dissipation Tamb 25 C; SOT666 - - 200 mW
Ptot Total power dissipation Tamb 25 C; SOT353 - - 200 mW
Ptot Total power dissipation Tamb 25 C; SOT363 - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Tstg Storage temperature - -65 - +150 C
Rth(j-a) Thermal resistance junction to ambient SOT666; in free air - - 625 K/W
Rth(j-a) Thermal resistance junction to ambient SOT353; in free air - - 625 K/W
Rth(j-a) Thermal resistance junction to ambient SOT363; in free air - - 625 K/W
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 5 V; IC = 10 A - 250 - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 50 200 mV
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA - 200 400 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 760 - mV
VBEsat Base-emitter saturation voltage IC = 100 mA; IB = 5 mA - 910 - mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA 610 660 710 mV
VBE Base-emitter voltage VCE = 5 V; IC = 10 mA - - 770 mV
Cc Collector capacitance VCB = 10 V; IE = 0 A; f = 1 MHz - - 1.5 pF
Ce Emitter capacitance VEB = 0.5 V; IC = 0 A; f = 1 MHz - 11 - pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 250 - MHz
NF Noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz - 2.8 - dB
NF Noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz - 3.3 - dB
Per Device Characteristics
Ptot Total power dissipation Tamb 25 C; SOT666 - - 300 mW
Ptot Total power dissipation Tamb 25 C; SOT353 - - 300 mW
Ptot Total power dissipation Tamb 25 C; SOT363 - - 300 mW
Rth(j-a) Thermal resistance junction to ambient SOT666; in free air - - 416 K/W
Rth(j-a) Thermal resistance junction to ambient SOT353; in free air - - 416 K/W
Rth(j-a) Thermal resistance junction to ambient SOT363; in free air - - 416 K/W

Applications

  • Current mirror
  • Differential amplifier

Package Outline

Refer to the following figures for package dimensions:

  • Figure 11: Package outline SOT666
  • Figure 12: Package outline SOT353 (SC-88A)
  • Figure 13: Package outline SOT363 (SC-88)

Soldering Information

Reflow soldering is the only recommended soldering method. Refer to the following figures for recommended footprints:

  • Figure 14: Reow soldering footprint SOT666
  • Figure 15: Reow soldering footprint SOT353 (SC-88A)
  • Figure 16: Wave soldering footprint SOT353 (SC-88A)
  • Figure 17: Reow soldering footprint SOT363 (SC-88)
  • Figure 18: Wave soldering footprint SOT363 (SC-88)

Ordering Information

Type Number Package Name Description
PMP4201V SOT666 Plastic surface-mounted package; 6 leads
PMP4201G SOT353 SC-88A; Plastic surface-mounted package; 5 leads
PMP4201Y SOT363 SC-88; Plastic surface-mounted package; 6 leads

Marking Codes

Type Number Marking Code
PMP4201V EA
PMP4201G R7*
PMP4201Y S7*

Packing Information

Type Number Package Description Packing Quantity
PMP4201V SOT666 2 mm pitch, 8 mm tape and reel 3000
PMP4201V SOT666 4 mm pitch, 8 mm tape and reel 4000
PMP4201G SOT353 4 mm pitch, 8 mm tape and reel 4000
PMP4201Y SOT363 4 mm pitch, 8 mm tape and reel; T1 (normal taping) 4000
PMP4201Y SOT363 4 mm pitch, 8 mm tape and reel; T2 (reverse taping) 4000

2410121816_Nexperia-PMP4201V-115_C552998.pdf

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