Low RDS ON N Channel Power MOSFET NH NSH045N100S for DC DC Converters and Motor Drive Applications
Key Attributes
Model Number:
NSH045N100S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
970pF
Pd - Power Dissipation:
179W
Input Capacitance(Ciss):
4.5nF
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
NSH045N100S
Package:
TO-252
Product Description
Product Overview
The NSH045N100S is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures robust reliability. This MOSFET is ideal for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Niuhang (Trademark: NH)
- Model ID: NSH045N100S
- Package: TO-252
- Certifications: RoHS COMPLIANT, Pb-Frce
- Weight: Approx. 0.321 Grams (0.01132 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | Min. @ Tj | VDS | 100 | V | ||
| Continuous Drain Current | Min. @ Ta | ID | 120 | A | ||
| Drain-Source On Resistance | Type @ 10V | RDS(ON) | 4.50 | m | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 120 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 77 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 480 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 179 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 1.43 | W/ | ||
| Power Dissipation Derating Factor | Ta= 100 | 71 | W | |||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current, Single Pulse (Note 1) | L= 0.5 mH | IAS | 32 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH | EAS | 256 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 100.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 0.7 | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 100 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.114 | -- | V/ | |
| Drain-Source Leakage Current | VDS= 100 V,VGS=0V | I DSS | -- | 1 | uA | |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | 100 | nA | |
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | 40 | -- | S | |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | 4.50 | 5.00 | m | |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | 5.18 | 6.70 | m | |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | 2.30 | -- | ||
| Input Capacitance | VDS= 50 V | C iss | 4500.0 | -- | pF | |
| Output Capacitance | VGS= 0 V | C oss | 970.0 | -- | pF | |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | 30.0 | -- | pF | |
| Turn-On Delay Time | VDS= 50 V | t d(on) | 28.0 | -- | ns | |
| Turn-On Rise Time | VGS= 10 V | t r | 32.0 | -- | ns | |
| Turn-Off Delay Time | RG= 10 | t d(off) | 48.0 | -- | ns | |
| Turn-Off Rise Time | t f | 27.0 | -- | ns | ||
| Total Gate Charge | VDS= 50 V | Q g | 90.0 | -- | nC | |
| Gate-Source Charge | VGS= 10 V | Q gs | 28.0 | -- | nC | |
| Gate-Drain Charge | ID= 20 A | Q gd | 19.0 | -- | nC | |
| Drain-Source Diode Characteristics And Maximum Ratings | ||||||
| Max. Diode Forward Current | I S | -- | 120 | A | ||
| Max. Pulsed Forward Current | I SM | -- | 420 | A | ||
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | 0.80 | 1.1 | V | |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | 80 | -- | ns | |
| Reverse Recovery Charge | VGS= 10 V,VDS= 50 V | Q rr | 190.0 | -- | nC | |
| OUTLINE DRAWINGS TO-252 OUTLINE DIMENSIONS | ||||||
| Dim. | Millimeters | Inches | Min. | Typ. | Max. | Min. |
| A | 6.100 - 7.100 | 0.240 - 0.280 | ||||
| B | 4.800 - 5.800 | 0.189 - 0.228 | ||||
| C | 1.950 - 2.550 | 0.077 - 0.100 | ||||
| D | 0.350 - 0.750 | 0.014 - 0.030 | ||||
| E | 9.250 - 10.750 | 0.364 - 0.423 | ||||
| F | 5.600 - 6.600 | 0.220 - 0.260 | ||||
| G | 2.500 - 3.100 | 0.098 - 0.122 | ||||
| H | 0.650 - 1.050 | 0.026 - 0.041 | ||||
| J | 2.100 - 2.500 | 0.083 - 0.098 | ||||
| L | 1.000 - 1.400 | 0.039 - 0.055 | ||||
| M | 0.350 - 0.750 | 0.014 - 0.030 | ||||
| PACKING INFORMATION | ||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 | |
2505061659_NH-NSH045N100S_C7427701.pdf
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