Nexperia PDTA114YT 215 PNP Resistor Equipped Transistor in Surface Mounted Package for Load Switching
Key Attributes
Model Number:
PDTA114YT,215
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
4.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA114YT,215
Package:
SOT-23
Product Description
Nexperia PDTA114Y Series PNP Resistor-Equipped Transistors
Product Overview
The Nexperia PDTA114Y series comprises PNP Resistor-Equipped Transistors (RETs) in compact Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 10 k, R2 = 47 k), which reduce component count, simplify circuit design, and lower pick-and-place costs. They are AEC-Q101 qualified, making them suitable for digital applications in the automotive and industrial segments. These devices offer a cost-saving alternative to BC847/857 series in digital applications, control of IC inputs, and switching loads.
Product Attributes
- Brand: Nexperia
- Type: PNP Resistor-Equipped Transistor (RET)
- Certifications: AEC-Q101 qualified
- Built-in Resistors: R1 = 10 k, R2 = 47 k
Technical Specifications
| Type Number | Package | NPN Complement | Package Configuration | Output Current (IO) Min/Typ/Max | R1 Bias Resistor (Input) Min/Typ/Max | R2/R1 Bias Resistor Ratio Min/Typ/Max | Collector-Emitter Voltage (VCEO) Min/Typ/Max |
|---|---|---|---|---|---|---|---|
| PDTA114YE | SOT416 (SC-75) | PDTC114YE | ultra small | - / - / -100 mA | 7 k / 10 k / 13 k | 3.7 / 4.7 / 5.7 | - / - / -50 V |
| PDTA114YM | SOT883 (SC-101) | PDTC114YM | leadless ultra small | - / - / -100 mA | 7 k / 10 k / 13 k | 3.7 / 4.7 / 5.7 | - / - / -50 V |
| PDTA114YT | SOT23 (TO-236AB) | PDTC114YT | small | - / - / -100 mA | 7 k / 10 k / 13 k | 3.7 / 4.7 / 5.7 | - / - / -50 V |
| PDTA114YU | SOT323 (SC-70) | PDTC114YU | very small | - / - / -100 mA | 7 k / 10 k / 13 k | 3.7 / 4.7 / 5.7 | - / - / -50 V |
Features and Benefits
- 100 mA output current capability
- Reduces component count
- Built-in bias resistors
- Reduces pick and place costs
- Simplifies circuit design
- AEC-Q101 qualified
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC847/857 series in digital applications
- Control of IC inputs
- Switching loads
Marking Codes
| Type Number | Marking Code |
|---|---|
| PDTA114YE | 36 |
| PDTA114YM | DF |
| PDTA114YT | *29 |
| PDTA114YU | *55 |
Limiting Values
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | Collector-base voltage | open emitter | - | -50 | V |
| VCEO | Collector-emitter voltage | open base | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | -6 | V |
| VI | Input voltage | positive | - | +6 | V |
| VI | Input voltage | negative | - | -40 | V |
| IO | Output current | - | - | -100 | mA |
| ICM | Peak collector current | single pulse; tp 1 ms | - | -100 | mA |
| Ptot | Total power dissipation | Tamb 25 C, PDTA114YE (SOT416) [1][2] | - | 150 | mW |
| Tamb 25 C, PDTA114YM (SOT883) [2][3] | - | 250 | mW | ||
| Tamb 25 C, PDTA114YT (SOT23) [1] | - | 250 | mW | ||
| Tamb 25 C, PDTA114YU (SOT323) [1] | - | 200 | mW | ||
| Tj | Junction temperature | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | +150 | C |
| Tstg | Storage temperature | - | -65 | +150 | C |
Thermal Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA114YE (SOT416) [1][2] | - | - | 830 | K/W |
| PDTA114YM (SOT883) [2][3] | - | - | 500 | K/W | ||
| PDTA114YT (SOT23) [1] | - | - | 500 | K/W | ||
| PDTA114YU (SOT323) [1] | - | - | 625 | K/W |
Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A | ||
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -150 | A |
| hFE | DC current gain | VCE = -5 V; IC = -5 mA | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -5 mA; IB = -0.25 mA | - | - | -100 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -0.7 | -0.5 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -1 mA | -1.4 | -0.8 | - | V |
| R1 | Bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | - | 3.7 | 4.7 | 5.7 | - |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
2410121814_Nexperia-PDTA114YT-215_C513115.pdf
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