Nexperia PDTA143ZT 215 PNP resistor equipped transistor designed for automotive and industrial digital
Key Attributes
Model Number:
PDTA143ZT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA143ZT,215
Package:
SOT-23
Product Description
Product Overview
The PDTA143Z series is a family of PNP resistor-equipped transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They are AEC-Q101 qualified, making them suitable for digital applications in automotive and industrial segments. The PDTA143Z series offers a cost-saving alternative to BC847/857 series in digital applications and is ideal for controlling IC inputs and switching loads.
Product Attributes
- Brand: NXP Semiconductors
- Type: PNP Resistor-Equipped Transistor (RET)
- Technology: Surface-Mounted Device (SMD)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Type Number | Package | NPN Complement | Package Configuration | R1 Bias Resistor (Input) | R2/R1 Bias Resistor Ratio | Output Current (IO) | Collector-Emitter Voltage (VCEO) |
|---|---|---|---|---|---|---|---|
| PDTA143ZE | SOT416 (SC-75) | PDTC143ZE | ultra small | 4.7 k | 10 | -100 mA | -50 V |
| PDTA143ZM | SOT883 (SC-101) | PDTC143ZM | leadless ultra small | 4.7 k | 10 | -100 mA | -50 V |
| PDTA143ZT | SOT23 (TO-236AB) | PDTC143ZT | small | 4.7 k | 10 | -100 mA | -50 V |
| PDTA143ZU | SOT323 (SC-70) | PDTC143ZU | very small | 4.7 k | 10 | -100 mA | -50 V |
Key Characteristics (Tamb = 25 C unless otherwise specified)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -170 | A |
| hFE | DC current gain | VCE = -5 V; IC = -10 mA | 100 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = -5 mA; IB = -0.25 mA | - | - | -100 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -0.6 | -0.5 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -5 mA | -1.3 | -0.9 | - | V |
| R1 | Bias resistor 1 (input) | 3.3 | 4.7 | 6.1 | k | |
| R2/R1 | Bias resistor ratio | 8 | 10 | 12 | ||
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
2410121747_Nexperia-PDTA143ZT-215_C75553.pdf
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