Nexperia PDTC143TM 315 transistor featuring built in bias resistors for switching and amplification

Key Attributes
Model Number: PDTC143TM,315
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC143TM,315
Package:
SOT-883
Product Description

PDTC143T Series: NPN Resistor-Equipped Transistors

Product Overview
The PDTC143T series NPN resistor-equipped transistors are designed for general-purpose switching and amplification applications, including inverter and interface circuits. Featuring built-in bias resistors, these transistors simplify circuit design, reduce component count, and lower pick-and-place costs. The series offers R1 bias resistor values of 4.7 k with R2 open, providing a robust solution for various electronic designs.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Type: NPN Resistor-Equipped Transistor
  • Bias Resistor (R1): 4.7 k
  • Bias Resistor (R2): Open

Technical Specifications

Type Number Package Marking Code PNP Complement Collector-Emitter Voltage (VCEO) (Max) Output Current (IO) (DC) (Max) Bias Resistor (R1) (Typ)
PDTC143TE SOT416 SC-75 PDTA143TE -50 V -100 mA 4.7 k
PDTC143TEF SOT490 SC-89 PDTA143TEF -50 V -100 mA 4.7 k
PDTC143TK SOT346 SC-59 PDTA143TK -50 V -100 mA 4.7 k
PDTC143TM SOT883 SC-101 PDTA143TM -50 V -100 mA 4.7 k
PDTC143TS SOT54 SC-43 PDTA143TS -50 V -100 mA 4.7 k
PDTC143TT SOT23 - PDTA143TT -50 V -100 mA 4.7 k
PDTC143TU SOT323 SC-70 PDTA143TU -50 V -100 mA 4.7 k

Limiting Values

Symbol Parameter Conditions Min. Max. Unit
VCBO Collector-base voltage open emitter - 50 V
VCEO Collector-emitter voltage open base - 50 V
VEBO Emitter-base voltage open collector - 5 V
IO Output current (DC) - - 100 mA
ICM Collector current - - 100 mA
Ptot Total power dissipation Tamb 25 C, SOT54 (note 1) - 500 mW
Tamb 25 C, SOT23 (note 1) - 250 mW
Tamb 25 C, SOT346 (note 1) - 250 mW
Tamb 25 C, SOT323 (note 1) - 200 mW
Tamb 25 C, SOT490 (notes 1 and 2) - 250 mW
Tamb 25 C, SOT883 (notes 2 and 3) - 250 mW
Tamb 25 C, SOT416 (note 1) - 150 mW
Tstg Storage temperature - -65 +150 C
Tj Junction temperature - - 150 C
Tamb Operating ambient temperature - -65 +150 C

Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-a) Thermal resistance from junction to ambient in free air SOT54 (note 1) - - 250 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT23 (note 1) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT346 (note 1) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT323 (note 1) - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT490 (notes 1 and 2) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT883 (notes 2 and 3) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT416 (note 1) - - 833 K/W
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA 200 - - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV
R1 Input resistor - 3.3 4.7 6.1 k
Cc Collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz - - 2.5 pF

Contact Information
For additional information, please visit: http://www.nexperia.com
For sales offices addresses, send an email to: salesaddresses@nexperia.com

Nexperia B.V. 2009. All rights reserved.


2410122008_Nexperia-PDTC143TM-315_C552206.pdf
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