Nexperia PDTA114TT 215 PNP Resistor Equipped Transistors Offering Compact Package and Easy Assembly

Name: Nexperia PDTA114TT 215 PNP Resistor Equipped Transistors Offering Compact Package and Easy Assembly
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: PDTA114TT,215
Availability: InStock

Key Attributes

Model Number: PDTA114TT,215

Product Custom Attributes

Emitter-Base Voltage VEBO:

Input Resistor:

10kΩ

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

PDTA114TT,215

Package:

SOT-23

Product Description

Nexperia PDTA114T Series: PNP Resistor-Equipped Transistors

The Nexperia PDTA114T series comprises PNP Resistor-Equipped Transistors (RET) in compact plastic packages. These transistors are designed to reduce component count, simplify circuit design, and lower pick-and-place costs. They are ideal for digital applications and serve as a cost-effective alternative to the BC857 series in such scenarios, functioning as low-current peripheral drivers and for controlling IC inputs.

Product Attributes

Brand: Nexperia
Product Type: PNP Resistor-Equipped Transistors (RET)
Internal Resistor (R1): 10 k
Internal Resistor (R2): Open

Technical Specifications

Type Number	Package Name	Description	NPN Complement	Output Current (IO)	Bias Resistor (R1)	Collector-Emitter Voltage (VCEO)
PDTA114TE	SOT416 (SC-75)	Plastic surface-mounted package; 3 leads	PDTC114TE	-100 mA	7 - 13 k	-50 V
PDTA114TK	SOT346 (SC-59A/TO-236)	Plastic surface-mounted package; 3 leads	PDTC114TK	-100 mA	7 - 13 k	-50 V
PDTA114TM	SOT883 (SC-101)	Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm	PDTC114TM	-100 mA	7 - 13 k	-50 V
PDTA114TS	SOT54 (SC-43A/TO-92)	Plastic single-ended leaded (through hole) package; 3 leads	PDTC114TS	-100 mA	7 - 13 k	-50 V
PDTA114TT	SOT23 (TO-236AB)	Plastic surface-mounted package; 3 leads	PDTC114TT	-100 mA	7 - 13 k	-50 V
PDTA114TU	SOT323 (SC-70)	Plastic surface-mounted package; 3 leads	PDTC114TU	-100 mA	7 - 13 k	-50 V

Key Features

100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design

Applications

Digital applications
Cost-saving alternative to BC857 series in digital applications
Control of IC inputs
Low current peripheral driver

Limiting Values

Symbol	Parameter	Conditions	Min	Max	Unit
VCBO	Collector-base voltage	open emitter	-	-50	V
VCEO	Collector-emitter voltage	open base	-	-50	V
VEBO	Emitter-base voltage	open collector	-	-5	V
IO	Output current	-	-	-100	mA
ICM	Peak collector current	single pulse; tp 1 ms	-	-100	mA
Ptot	Total power dissipation	Tamb 25 C (PDTA114TE [1])	-	150	mW
Ptot	Total power dissipation	Tamb 25 C (PDTA114TK [1])	-	250	mW
Ptot	Total power dissipation	Tamb 25 C (PDTA114TM [2][3])	-	250	mW
Ptot	Total power dissipation	Tamb 25 C (PDTA114TS [1])	-	500	mW
Ptot	Total power dissipation	Tamb 25 C (PDTA114TT [1])	-	250	mW
Ptot	Total power dissipation	Tamb 25 C (PDTA114TU [1])	-	200	mW
Tj	Junction temperature	-	-	150	C
Tamb	Ambient temperature	-	-65	+150	C
Tstg	Storage temperature	-	-65	+150	C

Thermal Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Rth(j-a)	Thermal resistance from junction to ambient	in free air (PDTA114TE [1])	-	-	833	K/W
Rth(j-a)	Thermal resistance from junction to ambient	in free air (PDTA114TK [1])	-	-	500	K/W
Rth(j-a)	Thermal resistance from junction to ambient	in free air (PDTA114TM [2][3])	-	-	500	K/W
Rth(j-a)	Thermal resistance from junction to ambient	in free air (PDTA114TS [1])	-	-	250	K/W
Rth(j-a)	Thermal resistance from junction to ambient	in free air (PDTA114TT [1])	-	-	500	K/W
Rth(j-a)	Thermal resistance from junction to ambient	in free air (PDTA114TU [1])	-	-	625	K/W

Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
ICBO	Collector-base cut-off current	VCB = -50 V; IE = 0 A	-	-	-100	nA
ICEO	Collector-emitter cut-off current	VCE = -30 V; IB = 0 A	-	-	-1	A
ICEO	Collector-emitter cut-off current	VCE = -30 V; IB = 0 A; Tj = 150 C	-	-	-50	A
IEBO	Emitter-base cut-off current	VEB = -5 V; IC = 0 A	-	-	-100	nA
hFE	DC current gain	VCE = -5 V; IC = -1 mA	200	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = -10 mA; IB = -0.5 mA	-	-	-150	mV
R1	Bias resistor 1 (input)	-	7	10	13	k
Cc	Collector capacitance	VCB = -10 V; IE = ie = 0 A; f = 1 MHz	-	-	3	pF

Package Outlines

Refer to Section 8 of the original document for detailed package outline drawings for SOT416 (SC-75), SOT346 (SC-59A/TO-236), SOT883 (SC-101), SOT54 (SC-43A/TO-92), SOT54A, SOT54 variant, SOT23 (TO-236AB), and SOT323 (SC-70).

Ordering Information

Refer to Section 3 and Table 4 of the original document for detailed ordering information, including package type and description.

Marking

Refer to Section 4 and Table 5 of the original document for marking codes associated with each type number.

Packing Information

Refer to Section 9 and Table 9 of the original document for available packing methods, quantities, and tape and reel specifications.

For the most current information, please visit http://www.nexperia.com or contact salesaddresses@nexperia.com.

2410121816_Nexperia-PDTA114TT-215_C552043.pdf

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Nexperia PDTA114TT 215 PNP Resistor Equipped Transistors Offering Compact Package and Easy Assembly