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quality AEC Q101 qualified NPN transistor Nexperia PBSS4540X135 for power switching in communication systems factory
quality AEC Q101 qualified NPN transistor Nexperia PBSS4540X135 for power switching in communication systems factory

AEC Q101 qualified NPN transistor Nexperia PBSS4540X135 for power switching in communication systems

Key Attributes
Model Number: PBSS4540X,135
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.4W
Transition Frequency(fT):
70MHz
Type:
NPN
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS4540X,135
Package:
SOT-89
Product Description

Product Overview

The Nexperia PBSS4540X is a 40 V, 5 A NPN low VCEsat (BISS) transistor designed for medium power applications. It offers high collector current capability and high efficiency, leading to reduced heat generation. This AEC-Q101 qualified transistor is ideal for peripheral drivers, strobe flash units, inverter applications, power switches for communication systems, DC-to-DC conversion, and battery chargers.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN low VCEsat (BISS) Transistor
  • Complementary PNP Transistor: PBSS5540X
  • Qualification: AEC-Q101

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 40 V
IC Collector current - - - 4 A
ICM Peak collector current Single pulse; tp 10 ms - - 10 A
RCEsat Collector-emitter saturation resistance IC = 5 A; IB = 500 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C - 40 71 m
VCBO Collector-base voltage Open emitter - - 40 V
VEBO Emitter-base voltage Open collector - - 6 V
IB Base current - - - 1 A
Ptot Total power dissipation Tamb 25 C - - 2.5 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient In free air - - 50 K/W
Rth(j-sp) Thermal resistance from junction to solder point - - - 16 K/W
hFE DC current gain VCE = 2 V; IC = 0.5 A; Tamb = 25 C 300 - - -
VCEsat Collector-emitter saturation voltage IC = 5 A; IB = 500 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C - - 355 mV
VBEsat Base-emitter saturation voltage IC = 5 A; IB = 500 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C - - 1.2 V
fT Transition frequency VCE = 10 V; IC = 0.1 A; f = 100 MHz; Tamb = 25 C 70 - - MHz
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 75 pF

Package Type: SOT89

Marking Code: %1B (where % is a placeholder for manufacturing site code)


2410121850_Nexperia-PBSS4540X-135_C551944.pdf

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