High Current Capacity NH MBR20L120FCT Schottky Rectifier for AC DC Converter and Inverter Circuits
Key Attributes
Model Number:
MBR20L120FCT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
160A
Reverse Leakage Current (Ir):
20uA@120V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
120V
Voltage - Forward(Vf@If):
890mV@10A
Current - Rectified:
20A
Mfr. Part #:
MBR20L120FCT
Package:
ITO-220AB
Product Description
Product Overview
The MBR20L120CT and MBR20L120FCT are Schottky Barrier Rectifiers from Niu Hang Specification Electronic Co. Ltd. These rectifiers offer low forward voltage drop and low power loss for high efficiency and reliability. They feature high forward surge capability and are suitable for high-frequency operation. Applications include high-frequency inverters, AC/DC converters, and LED drivers.
Product Attributes
- Brand: Niu Hang
- Origin: China
- Certifications: RoHS 2011/65/EU, Lead Free Finish, RoHS Compliant
- Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
- Mounting Position: Any
Technical Specifications
| Parameter | Model | Test Conditions | Min. | Typ. | Max. | Unit | |
| Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified) | MBR20L120CT,MBR20L120FCT | ||||||
| VRRM Peak repetitive reverse current per diode | 120 | Volts | |||||
| Maximum average forward rectified current(see fig.1) | MBR20L120CT,MBR20L120FCT | TA=125 | 20.0 | A | |||
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL) | MBR20L120CT,MBR20L120FCT | 750 | A | ||||
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | MBR20L120CT,MBR20L120FCT | ||||||
| IF= 1V,10KHz VRRM | 0.83 | V | |||||
| Reverse current per diode (note1) | MBR20L120CT,MBR20L120FCT | TA=25 | 10 | uA | |||
| Reverse current per diode (note1) | MBR20L120CT,MBR20L120FCT | TA=125 | 20 | uA | |||
| Instaneous forward voltage per diode (note1) | MBR20L120CT,MBR20L120FCT | IF=10A | 0.78 | 0.82 | V | ||
| Instaneous forward voltage per diode (note1) | MBR20L120CT,MBR20L120FCT | IF=20A | 0.83 | 0.89 | V | ||
| Typical junction capacitance | MBR20L120CT,MBR20L120FCT | VR=4V, f=1MHz | 2 | 10 | pF | ||
| Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | MBR20L120CT,MBR20L120FCT | ||||||
| RJC Typical thermal resistance (note3) | Device mounted on 75mm x 45mm x 2.5mm Aluminum Plate Heatsink. | 2 | /W | ||||
| Storage temperature range | MBR20L120CT,MBR20L120FCT | -55 | 150 | ||||
| Maximum Mounting torque, M3 srew | MBR20L120CT,MBR20L120FCT | 0.8 | 1.1 | N.m |
Outline Dimensions
| TO-220AB | TO-220F | ||||||
| Dim. | Min. | Typ. | Max. | Dim. | Min. | Typ. | Max. |
| A | 9.80 | - | 10.40 | A | 9.91 | 10.21 | 10.41 |
| B | 14.95 | - | 15.50 | B | 15.30 | 16.00 | 16.50 |
| C | 8.40 | - | 9.40 | C | 6.20 | 6.75 | 7.20 |
| D | 4.20 | - | 4.70 | D | 4.44 | 4.70 | 4.80 |
| E | 1.15 | - | 1.45 | E | 2.45 | 2.57 | 3.55 |
| F | 12.50 | - | - | F | 12.50 | 13.50 | 14.50 |
| G | 2.30 | - | 2.70 | G | 2.25 | 2.40 | 2.60 |
| H | 0.30 | - | 0.45 | H | 0.35 | 0.50 | 0.58 |
| J | 3.00 | - | 4.50 | J | 2.60 | 2.88 | 4.00 |
| M | 2.44 | - | 2.64 | M | 2.41 | 2.50 | 2.67 |
| R | 0.70 | - | 1.00 | R | 0.58 | 0.82 | 0.94 |
| O | 3.45 | - | 3.85 | O | 3.25 | 3.55 | 3.75 |
| P | 2.80 | - | 3.20 | P | 2.15 | 3.30 | 3.50 |
| N | 4.88 | 5.00 | 5.28 | ||||
Packing Information
| Package | Package Method | Quantity (pcs/Tube) | Tube Size LWH(mm) | Quantity (pcs/Inner Box) | Inner Box Size LWH(mm) | Quantity (pcs/carton) | Outer Carton Size LWH(mm) |
| TO-220AB | Tube | 50 | 530x35x8 | 1000 | 570284185 | 5000 | 560x155x55 |
| TO-220F | Tube | 50 | 530x35x8 | 1000 | 570284185 | 5000 | 560x155x55 |
2410121819_NH-MBR20L120FCT_C7428054.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
