Automotive Ignition Coil Driver onsemi ISL9V3040S3ST-F085C IGBT with 300 mJ Energy and AEC-Q101 Qualification

Key Attributes
Model Number: ISL9V3040S3ST-F085C
Product Custom Attributes
Td(off):
15us
Pd - Power Dissipation:
150W
Td(on):
4us
Collector-Emitter Breakdown Voltage (Vces):
400V
Input Capacitance(Cies):
-
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.3V@1mA
Gate Charge(Qg):
17nC@12V
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
2.1us
Turn-On Energy (Eon):
-
Mfr. Part #:
ISL9V3040S3ST-F085C
Package:
D2PAK
Product Description

Product Overview

The ISL9V3040x3ST-F085C is an EcoSPARK Ignition IGBT designed for automotive ignition coil driver circuits. It offers a high energy capability of 300 mJ at 25C, features a logic-level gate drive, and is AEC-Q101 Qualified and PPAP Capable. This device is suitable for high current ignition systems and coil-on-plug applications.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: AEC-Q101 Qualified, PPAP Capable, PbFree, RoHS Compliant

Technical Specifications

ModelParameterValueUnitConditions
ISL9V3040x3ST-F085CCollector to Emitter Breakdown Voltage (BVCER)400VIC = 1 mA
Emitter to Collector Voltage - Reverse Battery (BVECS)24VIC = 10 mA
SCIS Energy (ESCIS25)300mJTJ = 25C
SCIS Energy (ESCIS150)170mJTJ = 150C
Collector Current Continuous (IC25)21AVGE = 4.0 V, TC = 25C
Collector Current Continuous (IC110)17AVGE = 4.0 V, TC = 110C
Gate to Emitter Voltage Continuous (VGEM)10V
Power Dissipation Total (PD)150WTC = 25C
Operating Junction and Storage Temperature (TJ, TSTG)-55 to +175C
Lead Temperature for Soldering (TL)300C1/8 from case for 10 s
Reflow Soldering (TPKG)260Caccording to JESD020C
ISL9V3040D3ST-F085CPackageDPAK (PbFree)2500 Units/Tape & Reel
ISL9V3040S3ST-F085CPackageD2PAK (PbFree)800 Units/Tape & Reel

2410010203_onsemi-ISL9V3040S3ST-F085C_C603081.pdf

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