Surface Mount Rectifier NH ES1J SMA Featuring Low Forward Voltage Drop and Fast Reverse Recovery Time
Key Attributes
Model Number:
ES1J(SMA)
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
35ns
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
ES1J(SMA)
Package:
DO-214AC(SMA)
Product Description
ES1A THRU ES1M SURFACE MOUNT SUPER FAST RECOVERY RECTIFIERS
Niu Hang's ES1A through ES1M series are surface mount super fast recovery rectifiers featuring glass passivated chip junctions, super fast reverse recovery times, and low forward voltage drop for high efficiency. They offer low leakage current and high forward surge capability for enhanced reliability. These rectifiers are suitable for high-frequency inverters, AC/DC converters, DC/DC converters, and LED driver applications.
Product Attributes
- Brand: Niu Hang (NH)
- Material: Glass passivated chip
- Certifications: RoHS Compliant, Lead Free Finish
- Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208
- Mounting Position: Any
- Weight: Approx. 0.063 grams (0.0022 ounce)
- Marking: White band denotes cathode
Technical Specifications
| Model | VRRM (V) | VRMS (V) | IF(AV) (A) | IFSM (A) | VF (V) | IR (uA) | I2t (A2sec) | CJ (pF) | TRR (ns) |
| ES1A | 50~100 | 35 | 1.0 | 50 | 0.95 | 5 | 30 | 35 | 50 |
| ES1B | 50~100 | 35 | 1.0 | 50 | 0.95 | 5 | 30 | 35 | 50 |
| ES1D | 100~200 | 70 | 1.0 | 50 | 0.95 | 5 | 30 | 35 | 50 |
| ES1G | 200~400 | 140 | 1.0 | 50 | 0.95 | 5 | 30 | 35 | 50 |
| ES1J | 400~600 | 280 | 1.0 | 50 | 0.95 | 5 | 30 | 35 | 50 |
| ES1K | 600~800 | 420 | 1.0 | 50 | 0.95 | 5 | 30 | 35 | 50 |
| ES1M | 800~1000 | 560 | 1.0 | 50 | 0.95 | 5 | 30 | 35 | 50 |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Maximum average forward rectified current | IF(AV) | - | - | 1.0 | A | TA=125 |
| Peak forward surge current 8.3ms single half sine-wave | IFSM | - | - | 50 | A | TA=25 |
| Maximum instantaneous forward voltage | VF | - | 0.95 | - | V | IF=1.0 A (Note 1) |
| Maximum instantaneous reveSe current at rated DC blocking voltage | IR | - | 5 | - | uA | VR=VRRM, TA=25 (Note 1) |
| Current Squared Time Per Diode (t<8.3ms) | I2t | - | 30 | - | A2sec | - |
| Typical junction capacitance | CJ | - | 35 | - | pF | VR=4V, 1MHz (Note 2) |
| Maximum ReveSe Recovery Time | TRR | - | - | 50 | ns | IF=0.5A, IR=1.0A, IRR=0.25A |
| Operating junction to Case Thermal Resistance | RJC | - | - | 15 | /W | - |
| Typical thermal resistance Junction to Ambient | RJA | - | - | 85 | /W | (Note 2) |
| Storage temperature range | TSTG | -55 | - | 150 | - | |
| Operating junction temperature | TJ | -55 | - | 150 | - |
2410121721_NH-ES1J-SMA_C7428234.pdf
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